Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DS-T1-E3 SI2319DS-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028386-SI2319DS-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Family Name: Si2319DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 2.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 470pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 82 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): AP2321GN-HF; PJA3441_R2_00001; PJA3441_R1_00001; Introduction Date: July 10, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management
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Description
Manufacturer: Vishay Win Source Part Number: 028386-SI2319DS-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Family Name: Si2319DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 2.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 470pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 82 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): AP2321GN-HF; PJA3441_R2_00001; PJA3441_R1_00001; Introduction Date: July 10, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DS-T1-E3 - 028386-SI2319DS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DS-T1-E3
028386-SI2319DS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DS-T1-E3 028386-SI2319DS-T1-E3
Manufacturer: Vishay Win Source Part Number: 028386-SI2319DS-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Family Name: Si2319DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 2.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 470pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 82 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): AP2321GN-HF; PJA3441_R2_00001; PJA3441_R1_00001; Introduction Date: July 10, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 028386-SI2319DS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Family Name: Si2319DS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 2.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 470pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 82 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): AP2321GN-HF; PJA3441_R2_00001; PJA3441_R1_00001;
Introduction Date: July 10, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management

Buy Now Datasheet
Singapore
40V 2.3A SOT-23 MOSFET Transistor
278-SI2319DS-T1-E3
40V 2.3A SOT-23 MOSFET Transistor 278-SI2319DS-T1-E3
P-CH JFET, 40V, 2.3A, 82mR, SOT-23-3, Small Signal Product overview: SI2319DS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 2.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 2.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2319DS-T1-E3 can be used for catalog matching and distributor lookup.

P-CH JFET, 40V, 2.3A, 82mR, SOT-23-3, Small Signal Product overview: SI2319DS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 2.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 2.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2319DS-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2319DS-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2319DS-T1-E3
Single FETs, MOSFETs SI2319DS-T1-E3
MOSFET P-CH 40V 2.3A SOT23-3

MOSFET P-CH 40V 2.3A SOT23-3

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2319DS-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2319DS-T1-E3TR-ND
Single FETs, MOSFETs SI2319DS-T1-E3TR-ND
P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2319DS-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2319DS-T1-E3CT-ND
Single FETs, MOSFETs SI2319DS-T1-E3CT-ND
P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2319DS-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2319DS-T1-E3DKR-ND
Single FETs, MOSFETs SI2319DS-T1-E3DKR-ND
P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 40V 3.0A 1.25W 82 mohms @ 10V

MOSFET 40V 3.0A 1.25W 82 mohms @ 10V

Buy Now Datasheet
P Channel Mosfet, -40V, -3A, To-236; Channel Type Vishay - 06J7581 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -40V, -3A, To-236; Channel Type Vishay
06J7581
P Channel Mosfet, -40V, -3A, To-236; Channel Type Vishay 06J7581
P CHANNEL MOSFET, -40V, -3A, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

P CHANNEL MOSFET, -40V, -3A, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
P Channel Mosfet, -40V, 3A, To-236, Full Reel; Channel Type Vishay - 85W0177 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -40V, 3A, To-236, Full Reel; Channel Type Vishay
85W0177
P Channel Mosfet, -40V, 3A, To-236, Full Reel; Channel Type Vishay 85W0177
P CHANNEL MOSFET, -40V, 3A, TO-236, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

P CHANNEL MOSFET, -40V, 3A, TO-236, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET P-CH 40V 2.3A SOT23-3 - 880-SI2319DS-T1-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 40V 2.3A SOT23-3
880-SI2319DS-T1-E3
MOSFET P-CH 40V 2.3A SOT23-3 880-SI2319DS-T1-E3
MOSFET P-CH 40V 2.3A SOT23-3

MOSFET P-CH 40V 2.3A SOT23-3

Supplier's Site
Fort Worth, TX, USA
TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R
70026411
TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R 70026411
TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R

TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2319DS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2319DS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2319DS-T1-E3
MOSFET P-CH 40V 2.3A SOT23-3

MOSFET P-CH 40V 2.3A SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Utmel Electronic Limited Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028386-SI2319DS-T1-E3 278-SI2319DS-T1-E3 SI2319DS-T1-E3 SI2319DS-T1-E3TR-ND SI2319DS-T1-E3 06J7581 880-SI2319DS-T1-E3 70026411 SI2319DS-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DS-T1-E3 40V 2.3A SOT-23 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET P Channel Mosfet, -40V, -3A, To-236; Channel Type Vishay MOSFET P-CH 40V 2.3A SOT23-3 TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 40 volts 40 volts -40 volts
PD 750 milliwatts 750 milliwatts 750 milliwatts 750 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 Surface Mount
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