MOSFET P-CH 40V 2.3A SOT23-3
Manufacturer: Vishay
Win Source Part Number: 028386-SI2319DS-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Family Name: Si2319DS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 2.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 470pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 82 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): AP2321GN-HF; PJA3441_R2_00001; PJA3441_R1_00001;
Introduction Date: July 10, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management
P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-CH JFET, 40V, 2.3A, 82mR, SOT-23-3, Small Signal Product overview: SI2319DS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 2.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 2.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2319DS-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 40V 2.3A SOT23-3
P CHANNEL MOSFET, -40V, -3A, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
P CHANNEL MOSFET, -40V, 3A, TO-236, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R
MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
MOSFET P-CH 40V 2.3A SOT23-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI2319DS-T1-E3 | 028386-SI2319DS-T1-E3 | SI2319DS-T1-E3TR-ND | 278-SI2319DS-T1-E3 | SI2319DS-T1-E3 | 06J7581 | 70026411 | SI2319DS-T1-E3 | 880-SI2319DS-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DS-T1-E3 | Single FETs, MOSFETs | 40V 2.3A SOT-23 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -40V, -3A, To-236; Channel Type Vishay | TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R | MOSFET | MOSFET P-CH 40V 2.3A SOT23-3 |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||
| V(BR)DSS | 40 volts | 40 volts | -40 volts | ||||||
| IDSS | 2300 milliamps | 3000 milliamps | |||||||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | 750 milliwatts |