Small Signal Field-Effect Transistor, Product overview: SI2319DDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2319DDS-T1-GE3
MOSFET P-CH 40V 2.7A/3.6A SOT23
Manufacturer: Vishay
Win Source Part Number: 894408-SI2319DDS-T1-
Series: TrenchFET® Gen III
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 40 V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI2319
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3 (TO-236)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SI2319DDS-T1-GE3TR, SI2319DDS-T1-GE3CT, SI2319DDS-T1-GE3DKR
P-Channel 40V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 40V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 40V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET, P-CH, -40V, -3.6A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.062ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes
40V 75mΩ@2.7A,10V 2.5V@250uA P Channel SOT-23-3(TO-236-3) MOSFETs ROHS
MOSFET -40V Vds 20V Vgs SOT-23
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2319DDS-T1-GE3 | SI2319DDS-T1-GE3 | 894408-SI2319DDS-T1-GE3 | SI2319DDS-T1-GE3CT-ND | 78AC6536 | SI2319DDS-T1-GE3 | SI2319DDS-T1-GE3 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DDS-T1-GE3 | Single FETs, MOSFETs | Mosfet, P-Ch, -40V, -3.6A, 150Deg C; Transistor Polarity Vishay | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| IDSS | 2700 milliamps | -3600 milliamps | |||||
| PD | 1000 milliwatts | 1000 milliwatts |
