MOSFET P-CH 40V 2.7A/3.6A SOT23
Manufacturer: Vishay
Win Source Part Number: 894408-SI2319DDS-T1-
Series: TrenchFET® Gen III
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 40 V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI2319
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3 (TO-236)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SI2319DDS-T1-GE3TR, SI2319DDS-T1-GE3CT, SI2319DDS-T1-GE3DKR
P-Channel 40V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 40V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 40V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET, P-CH, -40V, -3.6A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.062ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes
MOSFET -40V Vds 20V Vgs SOT-23
40V 75mΩ@2.7A,10V 2.5V@250uA P Channel SOT-23-3(TO-236-3) MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI2319DDS-T1-GE3 | 894408-SI2319DDS-T1-GE3 | SI2319DDS-T1-GE3CT-ND | 78AC6536 | SI2319DDS-T1-GE3 | SI2319DDS-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319DDS-T1-GE3 | Single FETs, MOSFETs | Mosfet, P-Ch, -40V, -3.6A, 150Deg C; Transistor Polarity Vishay | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts | 40 volts | ||||
| IDSS | 2700 milliamps | -3600 milliamps | ||||
| PD | 1000 milliwatts | 1000 milliwatts |
