MOSFET P-Ch 40V 3.1A TrenchFET SOT23
MOSFET P-Ch 40V 3.1A TrenchFET SOT23
MOSFET P-Ch 40V 3.1A TrenchFET SOT23
P-CH JFET, -40V, -4.4A, 77mR Rds(on), SOT-23 Product overview: SI2319CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -40V, -4.4A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -40V, -4.4A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2319CDS-T1-GE3
P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Manufacturer: Vishay
Win Source Part Number: 028385-SI2319CDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Family Name: Si2319CDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 4.4A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 595pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 77 mOhm @ 3.1A, 10V
Alternative Parts (Cross-Reference): DMP4065S-7; PJA3441_R2_00001; PJA3441_R1_00001;
Introduction Date: January 19, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
MOSFET P-CH 40V 4.4A SOT23-3
40V 4.4A 77mΩ@10V,3.1A 2.5V@250uA P Channel SOT-23 MOSFETs ROHS
MOSFET P-CH 40V 4.4A SOT23-3
MOSFET, P CHANNEL, -40V, -4.4A, SOT-23-3; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
MOSFET Transistor, P Channel, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V RoHS Compliant: Yes
MOSFET, P CHANNEL, -40V, -4.4A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W; MSL:- RoHS Compliant: Yes
MOSFET P-CH 40V 4.4A SOT-23
MOSFET -40V Vds 20V Vgs SOT-23
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 9194208 | 7879042P | 278-SI2319CDS-T1-GE3 | SI2319CDS-T1-GE3TR-ND | 028385-SI2319CDS-T1-GE3 | SI2319CDS-T1-GE3 | SI2319CDS-T1-GE3 | SI2319CDS-T1-GE3 | 05W6934 | 23T8498 | 86R3869 | 880-SI2319CDS-T1-GE3 | SI2319CDS-T1-GE3 |
| Product Name | MOSFETs | MOSFETs | -40V -4.4A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319CDS-T1-GE3 | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -40V, -4.4A, Sot-23-3; Channel Type Vishay | Mosfet Transistor, P Channel, -4.4 A, -40 V, 0.064 Ohm, -10 V, -1.2 V Rohs Compliant Vishay | Mosfet, P Channel, -40V, -4.4A, Sot-23-3, Full Reel; Channel Type Vishay | MOSFET P-CH 40V 4.4A SOT-23 | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||||||
| Package Type | SOT23; Sot-23 | SOT23; SOT-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | TO-3 | TO-3; SOT23 | |||
| Number of units in IC | 1 | 1 | |||||||||||
| PD | 2500 milliwatts | 1250 to 2500 milliwatts | 1250 milliwatts | 1250 milliwatts | 2500 milliwatts | 1250 milliwatts |
