Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319CDS-T1-GE3 SI2319CDS-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028385-SI2319CDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Family Name: Si2319CDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 4.4A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 595pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 77 mOhm @ 3.1A, 10V Alternative Parts (Cross-Reference): DMP4065S-7; PJA3441_R2_00001; PJA3441_R1_00001; Introduction Date: January 19, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028385-SI2319CDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Family Name: Si2319CDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 4.4A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 595pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 77 mOhm @ 3.1A, 10V Alternative Parts (Cross-Reference): DMP4065S-7; PJA3441_R2_00001; PJA3441_R1_00001; Introduction Date: January 19, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319CDS-T1-GE3 - 028385-SI2319CDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319CDS-T1-GE3
028385-SI2319CDS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319CDS-T1-GE3 028385-SI2319CDS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028385-SI2319CDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Family Name: Si2319CDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 4.4A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 595pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 77 mOhm @ 3.1A, 10V Alternative Parts (Cross-Reference): DMP4065S-7; PJA3441_R2_00001; PJA3441_R1_00001; Introduction Date: January 19, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028385-SI2319CDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Family Name: Si2319CDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 4.4A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 595pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 77 mOhm @ 3.1A, 10V
Alternative Parts (Cross-Reference): DMP4065S-7; PJA3441_R2_00001; PJA3441_R1_00001;
Introduction Date: January 19, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI2319CDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2319CDS-T1-GE3
Single FETs, MOSFETs SI2319CDS-T1-GE3
MOSFET P-CH 40V 4.4A SOT23-3

MOSFET P-CH 40V 4.4A SOT23-3

Supplier's Site Datasheet
MOSFETs - 9194208 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9194208
MOSFETs 9194208
MOSFET P-Ch 40V 3.1A TrenchFET SOT23

MOSFET P-Ch 40V 3.1A TrenchFET SOT23

Supplier's Site
MOSFETs - 7879042P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7879042P
MOSFETs 7879042P
MOSFET P-Ch 40V 3.1A TrenchFET SOT23

MOSFET P-Ch 40V 3.1A TrenchFET SOT23

Supplier's Site
MOSFETs - 7879042 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7879042
MOSFETs 7879042
MOSFET P-Ch 40V 3.1A TrenchFET SOT23

MOSFET P-Ch 40V 3.1A TrenchFET SOT23

Supplier's Site
Singapore
-40V -4.4A SOT-23 MOSFET Transistor
278-SI2319CDS-T1-GE3
-40V -4.4A SOT-23 MOSFET Transistor 278-SI2319CDS-T1-GE3
P-CH JFET, -40V, -4.4A, 77mR Rds(on), SOT-23 Product overview: SI2319CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -40V, -4.4A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -40V, -4.4A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2319CDS-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH JFET, -40V, -4.4A, 77mR Rds(on), SOT-23 Product overview: SI2319CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -40V, -4.4A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -40V, -4.4A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2319CDS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2319CDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2319CDS-T1-GE3TR-ND
Single FETs, MOSFETs SI2319CDS-T1-GE3TR-ND
P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2319CDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2319CDS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2319CDS-T1-GE3DKR-ND
P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2319CDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2319CDS-T1-GE3CT-ND
Single FETs, MOSFETs SI2319CDS-T1-GE3CT-ND
P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI2319CDS-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI2319CDS-T1-GE3
40V 4.4A 77mΩ@10V,3.1A 2.5V@250uA P Channel SOT-23 MOSFETs ROHS

40V 4.4A 77mΩ@10V,3.1A 2.5V@250uA P Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
Mosfet, P Channel, -40V, -4.4A, Sot-23-3; Channel Type Vishay - 05W6934 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -40V, -4.4A, Sot-23-3; Channel Type Vishay
05W6934
Mosfet, P Channel, -40V, -4.4A, Sot-23-3; Channel Type Vishay 05W6934
MOSFET, P CHANNEL, -40V, -4.4A, SOT-23-3; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes

MOSFET, P CHANNEL, -40V, -4.4A, SOT-23-3; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, P Channel, -4.4 A, -40 V, 0.064 Ohm, -10 V, -1.2 V Rohs Compliant Vishay - 23T8498 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -4.4 A, -40 V, 0.064 Ohm, -10 V, -1.2 V Rohs Compliant Vishay
23T8498
Mosfet Transistor, P Channel, -4.4 A, -40 V, 0.064 Ohm, -10 V, -1.2 V Rohs Compliant Vishay 23T8498
MOSFET Transistor, P Channel, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -40V, -4.4A, Sot-23-3, Full Reel; Channel Type Vishay - 86R3869 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -40V, -4.4A, Sot-23-3, Full Reel; Channel Type Vishay
86R3869
Mosfet, P Channel, -40V, -4.4A, Sot-23-3, Full Reel; Channel Type Vishay 86R3869
MOSFET, P CHANNEL, -40V, -4.4A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W; MSL:- RoHS Compliant: Yes

MOSFET, P CHANNEL, -40V, -4.4A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET -40V Vds 20V Vgs SOT-23

MOSFET -40V Vds 20V Vgs SOT-23

Buy Now Datasheet
MOSFET P-CH 40V 4.4A SOT-23 - 880-SI2319CDS-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 40V 4.4A SOT-23
880-SI2319CDS-T1-GE3
MOSFET P-CH 40V 4.4A SOT-23 880-SI2319CDS-T1-GE3
MOSFET P-CH 40V 4.4A SOT-23

MOSFET P-CH 40V 4.4A SOT-23

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2319CDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2319CDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2319CDS-T1-GE3
MOSFET P-CH 40V 4.4A SOT23-3

MOSFET P-CH 40V 4.4A SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. DigiKey LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028385-SI2319CDS-T1-GE3 SI2319CDS-T1-GE3 9194208 7879042P 278-SI2319CDS-T1-GE3 SI2319CDS-T1-GE3TR-ND SI2319CDS-T1-GE3 05W6934 23T8498 86R3869 SI2319CDS-T1-GE3 880-SI2319CDS-T1-GE3 SI2319CDS-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2319CDS-T1-GE3 Single FETs, MOSFETs MOSFETs MOSFETs -40V -4.4A SOT-23 MOSFET Transistor Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Mosfet, P Channel, -40V, -4.4A, Sot-23-3; Channel Type Vishay Mosfet Transistor, P Channel, -4.4 A, -40 V, 0.064 Ohm, -10 V, -1.2 V Rohs Compliant Vishay Mosfet, P Channel, -40V, -4.4A, Sot-23-3, Full Reel; Channel Type Vishay MOSFET MOSFET P-CH 40V 4.4A SOT-23 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 40 volts 40 volts 40 volts -40 volts
PD 1250 to 2500 milliwatts 1250 milliwatts 2500 milliwatts 1250 milliwatts 2500 milliwatts 1250 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; Sot-23 SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23 TO-3; SOT23 TO-3 TO-3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
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