Manufacturer: Vishay
Win Source Part Number: 1095736-SI2318DS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 540pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 3.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 40V 3A SOT23-3
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:750mW RoHS Compliant: Yes
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:750mW RoHS Compliant: Yes
MOSFET N-CH 40V 3A SOT23-3
MOSFET 40V 3.9A 1.25W 45mohm @ 10V
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1095736-SI2318DS-T1-GE3 | SI2318DS-T1-GE3DKR-ND | SI2318DS-T1-GE3 | 84R8029 | 15R4909 | SI2318DS-T1-GE3 | SI2318DS-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2318DS-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet; Channel Type Vishay | N Ch Mosfet; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | 750 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
