MOSFET N-Ch 40V 4.3A TrenchFET SOT23
MOSFET N-Ch 40V 4.3A TrenchFET SOT23
MOSFET N-Ch 40V 4.3A TrenchFET SOT23
N-Channel JFET, 40V, 5.6A, SOT-23, Surface Mount Product overview: SI2318CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 40V, 5.6A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2318CDS-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 028384-SI2318CDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Family Name: Si3210
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 340pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 4.3A, 10V
Alternative Parts (Cross-Reference): KMB3D9N40TA; TSM2318CX RF; TSM2318CX;
Introduction Date: July 28, 1998
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Motor Drive & Control
N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 40V 5.6A SOT23-3
MOSFET, N-CH, 40V, 3.9A, 150DEG C, 2.1W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
MOSFET, N CHANNEL, 40V, 5.6A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.1W; MSL:- RoHS Compliant: Yes
MOSFET 40V Vds 20V Vgs SOT-23
MOSFET N-CH 40V 5.6A SOT23-3
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 7879036 | 7879036P | 278-SI2318CDS-T1-GE3 | 028384-SI2318CDS-T1-GE3 | SI2318CDS-T1-GE3TR-ND | SI2318CDS-T1-GE3 | 47Y1307 | 65T1687 | SI2318CDS-T1-GE3 | SI2318CDS-T1-GE3 |
| Product Name | MOSFETs | MOSFETs | N-Channel SMD 40V 5.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2318CDS-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 3.9A, 150Deg C, 2.1W; Channel Type Vishay | Mosfet, N Channel, 40V, 5.6A, Sot-23-3, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||||
| Package Type | SOT23; Sot-23 | SOT23; SOT-23 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| Number of units in IC | 1 | |||||||||
| PD | 2100 milliwatts | 1250 to 2100 milliwatts | 1250 milliwatts | 2100 milliwatts |
