Vishay Precision Group MOSFETs SI2318CDS-T1-GE3

Description
MOSFET N-Ch 40V 4.3A TrenchFET SOT23
Request a Quote Datasheet
Description
MOSFET N-Ch 40V 4.3A TrenchFET SOT23
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 7879036 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7879036
MOSFETs 7879036
MOSFET N-Ch 40V 4.3A TrenchFET SOT23

MOSFET N-Ch 40V 4.3A TrenchFET SOT23

Supplier's Site
MOSFETs - 7879036P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7879036P
MOSFETs 7879036P
MOSFET N-Ch 40V 4.3A TrenchFET SOT23

MOSFET N-Ch 40V 4.3A TrenchFET SOT23

Supplier's Site
MOSFETs - 9194205 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9194205
MOSFETs 9194205
MOSFET N-Ch 40V 4.3A TrenchFET SOT23

MOSFET N-Ch 40V 4.3A TrenchFET SOT23

Supplier's Site
Singapore
N-Channel SMD 40V 5.6A MOSFET Transistor
278-SI2318CDS-T1-GE3
N-Channel SMD 40V 5.6A MOSFET Transistor 278-SI2318CDS-T1-GE3
N-Channel JFET, 40V, 5.6A, SOT-23, Surface Mount Product overview: SI2318CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 40V, 5.6A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2318CDS-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel JFET, 40V, 5.6A, SOT-23, Surface Mount Product overview: SI2318CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 40V, 5.6A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2318CDS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2318CDS-T1-GE3 - 028384-SI2318CDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2318CDS-T1-GE3
028384-SI2318CDS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2318CDS-T1-GE3 028384-SI2318CDS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028384-SI2318CDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Family Name: Si3210 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 340pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 42 mOhm @ 4.3A, 10V Alternative Parts (Cross-Reference): KMB3D9N40TA; TSM2318CX RF; TSM2318CX; Introduction Date: July 28, 1998 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: 2025 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Motor Drive & Control

Manufacturer: Vishay
Win Source Part Number: 028384-SI2318CDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Family Name: Si3210
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 340pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 4.3A, 10V
Alternative Parts (Cross-Reference): KMB3D9N40TA; TSM2318CX RF; TSM2318CX;
Introduction Date: July 28, 1998
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Motor Drive & Control

Buy Now Datasheet
Single FETs, MOSFETs - SI2318CDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2318CDS-T1-GE3TR-ND
Single FETs, MOSFETs SI2318CDS-T1-GE3TR-ND
N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2318CDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2318CDS-T1-GE3CT-ND
Single FETs, MOSFETs SI2318CDS-T1-GE3CT-ND
N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2318CDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2318CDS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2318CDS-T1-GE3DKR-ND
N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2318CDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2318CDS-T1-GE3
Single FETs, MOSFETs SI2318CDS-T1-GE3
MOSFET N-CH 40V 5.6A SOT23-3

MOSFET N-CH 40V 5.6A SOT23-3

Supplier's Site Datasheet
Mosfet, N-Ch, 40V, 3.9A, 150Deg C, 2.1W; Channel Type Vishay - 47Y1307 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 3.9A, 150Deg C, 2.1W; Channel Type Vishay
47Y1307
Mosfet, N-Ch, 40V, 3.9A, 150Deg C, 2.1W; Channel Type Vishay 47Y1307
MOSFET, N-CH, 40V, 3.9A, 150DEG C, 2.1W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes

MOSFET, N-CH, 40V, 3.9A, 150DEG C, 2.1W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 40V, 5.6A, Sot-23-3, Full Reel; Channel Type Vishay - 65T1687 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 40V, 5.6A, Sot-23-3, Full Reel; Channel Type Vishay
65T1687
Mosfet, N Channel, 40V, 5.6A, Sot-23-3, Full Reel; Channel Type Vishay 65T1687
MOSFET, N CHANNEL, 40V, 5.6A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.1W; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 40V, 5.6A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.1W; MSL:- RoHS Compliant: Yes

Supplier's Site
MOSFET 40V Vds 20V Vgs SOT-23

MOSFET 40V Vds 20V Vgs SOT-23

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2318CDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2318CDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2318CDS-T1-GE3
MOSFET N-CH 40V 5.6A SOT23-3

MOSFET N-CH 40V 5.6A SOT23-3

Supplier's Site

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 7879036 7879036P 278-SI2318CDS-T1-GE3 028384-SI2318CDS-T1-GE3 SI2318CDS-T1-GE3TR-ND SI2318CDS-T1-GE3 47Y1307 65T1687 SI2318CDS-T1-GE3 SI2318CDS-T1-GE3
Product Name MOSFETs MOSFETs N-Channel SMD 40V 5.6A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2318CDS-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 40V, 3.9A, 150Deg C, 2.1W; Channel Type Vishay Mosfet, N Channel, 40V, 5.6A, Sot-23-3, Full Reel; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
Package Type SOT23; Sot-23 SOT23; SOT-23 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
Number of units in IC 1
PD 2100 milliwatts 1250 to 2100 milliwatts 1250 milliwatts 2100 milliwatts
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