N-Channel 40V 4.3A (Ta), 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 40V 4.3A (Ta), 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 40V 4.3A (Ta), 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
Trans MOSFET N-CH 40V 5.6A 3-Pin SOT-23 T/R Product overview: SI2318CDS-T1-BE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 5.6A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 5.6A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2318CDS-T1-BE3
Win Source Part Number: 1108287-SI2318CDS-T1
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SI2318CDS-T1-BE3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-CHANNEL 40-V (D-S) MOSFET
N-CHANNEL 40-V (D-S) MOSFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SI2318CDS-T1-BE3TR-ND | 278-SI2318CDS-T1-BE3 | 1108287-SI2318CDS-T1-BE3 | SI2318CDS-T1-BE3 | SI2318CDS-T1-BE3 |
| Product Name | Single FETs, MOSFETs | 40V 5.6A SOT-23 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 40 volts | 40 volts | |||
| PD | 1250 milliwatts | 1250 to 2100 milliwatts | 1250 milliwatts |
