Manufacturer: Vishay
Win Source Part Number: 028383-SI2316DS-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.9A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA (Min)
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 215pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Ch MOSFET, 30V, 50mR, 2.9A, SOT-23-3, SM Product overview: SI2316DS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.9A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.9A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2316DS-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 2.9A SOT23-3
MOSFET N-CH 30V 2.9A SOT23-3
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:800mV; Power Dissipation:960mW; No. of Pins:3Pins RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 3.4A, TO-236, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:700mW RoHS Compliant: Yes
MOSFET 30V 3.4A 0.96W 50mohm @ 10V
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028383-SI2316DS-T1-E3 | SI2316DS-T1-E3CT-ND | 278-SI2316DS-T1-E3 | SI2316DS-T1-E3 | SI2316DS-T1-E3 | 85W2139 | 06J7579 | SI2316DS-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2316DS-T1-E3 | Single FETs, MOSFETs | 30V 2.9A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Channel Type Vishay | N Channel Mosfet, 30V, 3.4A, To-236, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 700 milliwatts | 700 milliwatts | 700 milliwatts | 700 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
