Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2316BDS-T1-E3 SI2316BDS-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028382-SI2316BDS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.6nC @ 10V Max Input Capacitance: 350pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 028382-SI2316BDS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.6nC @ 10V Max Input Capacitance: 350pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2316BDS-T1-E3 - 028382-SI2316BDS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2316BDS-T1-E3
028382-SI2316BDS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2316BDS-T1-E3 028382-SI2316BDS-T1-E3
Manufacturer: Vishay Win Source Part Number: 028382-SI2316BDS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.6nC @ 10V Max Input Capacitance: 350pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028382-SI2316BDS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9.6nC @ 10V
Max Input Capacitance: 350pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI2316BDS-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2316BDS-T1-E3DKR-ND
Single FETs, MOSFETs SI2316BDS-T1-E3DKR-ND
N-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2316BDS-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2316BDS-T1-E3CT-ND
Single FETs, MOSFETs SI2316BDS-T1-E3CT-ND
N-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2316BDS-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2316BDS-T1-E3TR-ND
Single FETs, MOSFETs SI2316BDS-T1-E3TR-ND
N-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 30V 4.5A 1.66W

MOSFET 30V 4.5A 1.66W

Buy Now Datasheet
Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R - 880-SI2316BDS-T1-E3 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R
880-SI2316BDS-T1-E3
Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R 880-SI2316BDS-T1-E3
Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R

Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2316BDS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2316BDS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2316BDS-T1-E3
MOSFET N-CH 30V 4.5A SOT23-3

MOSFET N-CH 30V 4.5A SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028382-SI2316BDS-T1-E3 SI2316BDS-T1-E3DKR-ND SI2316BDS-T1-E3 880-SI2316BDS-T1-E3 SI2316BDS-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2316BDS-T1-E3 Single FETs, MOSFETs MOSFET Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 1250 to 1660 milliwatts 1250 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
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