Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2315BDS SI2315BDS

Description
Manufacturer: Vishay Win Source Part Number: 321039-SI2315BDS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 715pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.85A, 4.5V Alternative Parts (Cross-Reference): IRLML6401TRPBF; Si2315BDS-T1; Si2315BDS-T1-E3; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 321039-SI2315BDS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 715pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.85A, 4.5V Alternative Parts (Cross-Reference): IRLML6401TRPBF; Si2315BDS-T1; Si2315BDS-T1-E3; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2315BDS - 321039-SI2315BDS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2315BDS
321039-SI2315BDS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2315BDS 321039-SI2315BDS
Manufacturer: Vishay Win Source Part Number: 321039-SI2315BDS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 715pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.85A, 4.5V Alternative Parts (Cross-Reference): IRLML6401TRPBF; Si2315BDS-T1; Si2315BDS-T1-E3; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 321039-SI2315BDS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 715pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.85A, 4.5V
Alternative Parts (Cross-Reference): IRLML6401TRPBF; Si2315BDS-T1; Si2315BDS-T1-E3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 321039-SI2315BDS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2315BDS
Polarity P-Channel; P-Channel
V(BR)DSS 12 volts
PD 750 milliwatts
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