Vishay Precision Group Single FETs, MOSFETs SI2315BDS-T1-E3

MOSFET P-CH 12V 3A SOT23-3

P-CH JFET, 12V, 3A, 50mR, TO-236-3, SMD Product overview: SI2315BDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 12V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 12V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2315BDS-T1-E3 can be used for catalog matching and distributor lookup.

P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Manufacturer: Vishay
Win Source Part Number: 028381-SI2315BDS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 715pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.85A, 4.5V
Alternative Parts (Cross-Reference): IRLML6401TRPBF; Si2315BDS; Si2315BDS-T1;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial