Manufacturer: Vishay
Win Source Part Number: 028381-SI2315BDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 715pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.85A, 4.5V
Alternative Parts (Cross-Reference): IRLML6401TRPBF; Si2315BDS; Si2315BDS-T1;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial
MOSFET P-CH 12V 3A SOT23-3
P-CH JFET, 12V, 3A, 50mR, TO-236-3, SMD Product overview: SI2315BDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 12V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 12V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2315BDS-T1-E3 can be used for catalog matching and distributor lookup.
P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
SOT-23-3 MOSFETs ROHS
P CHANNEL MOSFET, -12V, -3A, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
MOSFET, P CHANNEL, -12V, -3A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:750mW RoHS Compliant: Yes
12V 3A 50mΩ@3.85A,4.5V 750mW 900mV@250uA P Channel SOT-23-3 MOSFETs ROHS
MOSFET, Power; P-Channel; -12 V; 8 V; 3.5 A; 1.25 W; -55 to 150 degC
MOSFET P-CH 12V 3A SOT23-3
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028381-SI2315BDS-T1-E3 | SI2315BDS-T1-E3 | 278-SI2315BDS-T1-E3 | SI2315BDS-T1-E3DKR-ND | 17930-SI2315BDS-T1-E3 | 06J7577 | 29X0524 | SI2315BDS-T1-E3 | 70026068 | SI2315BDS-T1-E3 | SI2315BDS-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2315BDS-T1-E3 | Single FETs, MOSFETs | SMD 12V 3A MOSFET Transistor | Single FETs, MOSFETs | SOT-23-3 MOSFETs ROHS | P Channel Mosfet, -12V, -3A, To-236; Channel Type Vishay | Mosfet, P Channel, -12V, -3A, Sot-23-3, Full Reel; Channel Type Vishay | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET, Power; P-Channel; -12 V; 8 V; 3.5 A; 1.25 W; -55 to 150 degC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||||
| V(BR)DSS | 12 volts | 12 volts | 12 volts | ||||||||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | 750 milliwatts | 750 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3; SOT23 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 |
