Manufacturer: Vishay
Win Source Part Number: 1095733-SI2314EDS-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.77A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 14nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 33 mOhm @ 5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
N-Channel 20V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 20V 3.77A SOT23-3 Product overview: SI2314EDS-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.77A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.77A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2314EDS-T1-GE3
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.77A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; Power Dissipation:750mW RoHS Compliant: Yes
MOSFET N-CH 20V 3.77A SOT23-3
MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1095733-SI2314EDS-T1-GE3 | SI2314EDS-T1-GE3-ND | 278-SI2314EDS-T1-GE3 | 84R8027 | SI2314EDS-T1-GE3 | SI2314EDS-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2314EDS-T1-GE3 | Single FETs, MOSFETs | 20V 3.77A SOT23 MOSFET Transistor | N Ch Mosfet; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 20 volts | |||||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 |
