Vishay Precision Group N-Channel 20V 3.9A MOSFET Transistor SI2312BDS-T1-GE3

Description
N-Channel Si JFET, 20V, 3.9A, TO-236 Product overview: SI2312BDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2312BDS-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
N-Channel Si JFET, 20V, 3.9A, TO-236 Product overview: SI2312BDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2312BDS-T1-GE3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
N-Channel 20V 3.9A MOSFET Transistor
278-SI2312BDS-T1-GE3
N-Channel 20V 3.9A MOSFET Transistor 278-SI2312BDS-T1-GE3
N-Channel Si JFET, 20V, 3.9A, TO-236 Product overview: SI2312BDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2312BDS-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel Si JFET, 20V, 3.9A, TO-236 Product overview: SI2312BDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2312BDS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2312BDS-T1-GE3 - 028377-SI2312BDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2312BDS-T1-GE3
028377-SI2312BDS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2312BDS-T1-GE3 028377-SI2312BDS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028377-SI2312BDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Family Name: Si2312BDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.9A (Ta) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 12nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 31 mOhm @ 5A, 4.5V Alternative Parts (Cross-Reference): DMN2075U; RUR040N02HZGTL; RUR040N02FRATL; Introduction Date: January 24, 2005 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Vishay
Win Source Part Number: 028377-SI2312BDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Family Name: Si2312BDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.9A (Ta)
Gate-Source Threshold Voltage: 850mV @ 250μA
Max Gate Charge: 12nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 31 mOhm @ 5A, 4.5V
Alternative Parts (Cross-Reference): DMN2075U; RUR040N02HZGTL; RUR040N02FRATL;
Introduction Date: January 24, 2005
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - SI2312BDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2312BDS-T1-GE3
Single FETs, MOSFETs SI2312BDS-T1-GE3
MOSFET N-CH 20V 3.9A SOT23-3

MOSFET N-CH 20V 3.9A SOT23-3

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2312BDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2312BDS-T1-GE3CT-ND
Single FETs, MOSFETs SI2312BDS-T1-GE3CT-ND
N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2312BDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2312BDS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2312BDS-T1-GE3DKR-ND
N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2312BDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2312BDS-T1-GE3TR-ND
Single FETs, MOSFETs SI2312BDS-T1-GE3TR-ND
N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
N Channel Mosfet, 20V, 5A, To-236; Channel Type Vishay - 16P3709 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 20V, 5A, To-236; Channel Type Vishay
16P3709
N Channel Mosfet, 20V, 5A, To-236; Channel Type Vishay 16P3709
N CHANNEL MOSFET, 20V, 5A, TO-236; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 20V, 5A, TO-236; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 20V, 3.9A, Sot-23-3, Full Reel; Channel Type Vishay - 29X0523 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 20V, 3.9A, Sot-23-3, Full Reel; Channel Type Vishay
29X0523
Mosfet, N Channel, 20V, 3.9A, Sot-23-3, Full Reel; Channel Type Vishay 29X0523
MOSFET, N CHANNEL, 20V, 3.9A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:750mW; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 20V, 3.9A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:750mW; MSL:- RoHS Compliant: Yes

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI2312BDS-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI2312BDS-T1-GE3
20V 3.9A 750mW 31mΩ@4.5V,5A 850mV@250uA N Channel SOT-23 MOSFETs ROHS

20V 3.9A 750mW 31mΩ@4.5V,5A 850mV@250uA N Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V

MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2312BDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2312BDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2312BDS-T1-GE3
MOSFET N-CH 20V 3.9A SOT23-3

MOSFET N-CH 20V 3.9A SOT23-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Newark, An Avnet Company LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-SI2312BDS-T1-GE3 028377-SI2312BDS-T1-GE3 SI2312BDS-T1-GE3 SI2312BDS-T1-GE3CT-ND 16P3709 29X0523 SI2312BDS-T1-GE3 SI2312BDS-T1-GE3 SI2312BDS-T1-GE3
Product Name N-Channel 20V 3.9A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2312BDS-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs N Channel Mosfet, 20V, 5A, To-236; Channel Type Vishay Mosfet, N Channel, 20V, 3.9A, Sot-23-3, Full Reel; Channel Type Vishay Triode/MOS Tube/Transistor >> MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 750 milliwatts 750 milliwatts 750 milliwatts 750 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-3; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
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