Manufacturer: Vishay
Win Source Part Number: 028377-SI2312BDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Family Name: Si2312BDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.9A (Ta)
Gate-Source Threshold Voltage: 850mV @ 250μA
Max Gate Charge: 12nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 31 mOhm @ 5A, 4.5V
Alternative Parts (Cross-Reference): DMN2075U; RUR040N02HZGTL; RUR040N02FRATL;
Introduction Date: January 24, 2005
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
N-Channel Si JFET, 20V, 3.9A, TO-236 Product overview: SI2312BDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2312BDS-T1-GE3
MOSFET N-CH 20V 3.9A SOT23-3
N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
20V 3.9A 750mW 31mΩ@4.5V,5A 850mV@250uA N Channel SOT-23 MOSFETs ROHS
MOSFET N-CH 20V 3.9A SOT23-3
N CHANNEL MOSFET, 20V, 5A, TO-236; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV; MSL:- RoHS Compliant: Yes
MOSFET, N CHANNEL, 20V, 3.9A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:750mW; MSL:- RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028377-SI2312BDS-T1-GE3 | 278-SI2312BDS-T1-GE3 | SI2312BDS-T1-GE3 | SI2312BDS-T1-GE3CT-ND | SI2312BDS-T1-GE3 | SI2312BDS-T1-GE3 | SI2312BDS-T1-GE3 | 16P3709 | 29X0523 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2312BDS-T1-GE3 | N-Channel 20V 3.9A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 20V, 5A, To-236; Channel Type Vishay | Mosfet, N Channel, 20V, 3.9A, Sot-23-3, Full Reel; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | 750 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3; SOT23 |
