MOSFET N-CH 20V 3.9A SOT23-3
Manufacturer: Vishay
Win Source Part Number: 028378-SI2312BDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.9A (Ta)
Gate-Source Threshold Voltage: 850mV @ 250μA
Max Gate Charge: 12nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 31 mOhm @ 5A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs
N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
20V 3.9A 750mW 31mΩ@4.5V,5A 850mV@250uA N Channel SOT-23 MOSFETs ROHS
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV; Power Dissipation:750mW RoHS Compliant: Yes
MOSFET, N-CH, 20V, 3.9A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:850mV; Power RoHS Compliant: Yes
MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET N-CH 20V 3.9A SOT23-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI2312BDS-T1-E3 | 028378-SI2312BDS-T1-E3 | SI2312BDS-T1-E3DKR-ND | SI2312BDS-T1-E3 | SI2312BDS-T1-E3 | 51K6950 | 24AJ1911 | 85W0175 | SI2312BDS-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2312BDS-T1-E3 | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | N Channel Mosfet; Channel Type Vishay | Mosfet, N-Ch, 20V, 3.9A, Sot-23-3; Transistor Polarity Vishay | Mosfet, N Channel, 20V, 0.025Ohm, 3.9A, Sot-23-3, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||||
| IDSS | 3900 milliamps | 3900 milliamps | 3900 milliamps | 3900 milliamps | |||||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | 750 milliwatts |
