Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2311DS-T1-E3 SI2311DS-T1-E3

Manufacturer: Vishay
Win Source Part Number: 028376-SI2311DS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 710mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 970pF @ 4V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 45 mOhm @ 3.5A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

MOSFET P-CH 8V 3A SOT23-3 Product overview: SI2311DS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 3A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 3A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2311DS-T1-E3 can be used for catalog matching and distributor lookup.