Vishay Precision Group P Channel Mosfet; Channel Type Vishay SI2309DS-T1-GE3

Description
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:1.25W RoHS Compliant: Yes
  • P Channel Mosfet; Channel Type Vishay - 84R8025 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:1.25W RoHS Compliant: Yes

Suppliers

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P Channel Mosfet; Channel Type Vishay - 84R8025 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet; Channel Type Vishay
84R8025
P Channel Mosfet; Channel Type Vishay 84R8025
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:1.25W RoHS Compliant: Yes

P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:1.25W RoHS Compliant: Yes

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Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 84R8025
Product Name P Channel Mosfet; Channel Type Vishay
Polarity P-Channel
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