P-CH MOSFET, -60V, 1.2A, 345mR, SOT-23-3, Surface Mount Product overview: SI2309CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -60V, 1.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -60V, 1.2A, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2309CDS-T1-GE3
MOSFET P-CH 60V 1.6A SOT23-3
Manufacturer: Vishay
Win Source Part Number: 028375-SI2309CDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Family Name: Si2309CDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.6A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 4.1nC @ 4.5V
Max Input Capacitance: 210pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 345 mOhm @ 1.25A, 10V
Alternative Parts (Cross-Reference): ZXMP6A13F; ZXMP6A13FTA; ZXMP6A13FQTA;
Introduction Date: October 30, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET, P-CH, Vds -60V, Vgs +/- 20V, Rds(on) 285mohm, Id 1.6A, SOT-23, Pd 1.7W
MOSFET -60V Vds 20V Vgs SOT-23
60V 1.6A 345mΩ@10V,1.25A 3V@250uA P Channel SOT-23-3 MOSFETs ROHS
MOSFET, P CHANNEL, -60V, -1.6A, SOT-23-3; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET P-CH 60V 1.6A SOT23-3
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 7103250 | 7103250P | 278-SI2309CDS-T1-GE3 | SI2309CDS-T1-GE3 | 028375-SI2309CDS-T1-GE3 | SI2309CDS-T1-GE3DKR-ND | 70026446 | SI2309CDS-T1-GE3 | SI2309CDS-T1-GE3 | 69W7188 | SI2309CDS-T1-GE3 |
| Product Name | MOSFETs | MOSFETs | SMD -60V 1.2A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2309CDS-T1-GE3 | Single FETs, MOSFETs | MOSFET, P-CH, Vds -60V, Vgs +/- 20V, Rds(on) 285mohm, Id 1.6A, SOT-23, Pd 1.7W | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, P Channel, -60V, -1.6A, Sot-23-3; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||||||
| Package Type | SOT23; Sot-23 | SOT23; SOT-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | TO-3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | |||
| Number of units in IC | 1 | ||||||||||
| PD | 1700 milliwatts | 1000 milliwatts | 1000 to 1700 milliwatts | 1000 milliwatts |
