Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Product overview: SI2308DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2308DS-T1-GE3 can be used for catalog matching and distributor lookup.
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:1.25W RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2308DS-T1-GE3 | 84R8024 |
| Product Name | N-Channel MOSFET Transistor | N Channel Mosfet; Channel Type Vishay |
| Polarity | N-Channel | N-Channel |
