The Vishay N-Channel MOSFET, part number Si2308CDS, is rated for a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 2.6A. It features a maximum on-resistance (R_DS(on)) of 0.144Oc at a gate-source voltage (V_GS) of 10V and 0.200Oc at 4.5V. The device has a maximum power dissipation of 1.6W and operates within a junction temperature range of -55¬8C to +150¬8C. It is packaged in a SOT-23 form factor and is compliant with RoHS standards. This MOSFET is suitable for applications such as battery switching, DC/DC converters, and load switching, making it a versatile choice for various electronic projects.
Manufacturer: Vishay
Win Source Part Number: 894404-SI2308CDS-T1-
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 60 V 2.6A (Tc) 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI2308
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3 (TO-236)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SI2308CDS-T1-GE3DKR,
MOSFET N-CH 60V 2.6A SOT23-3
Small Signal Field-Effect Transistor, Product overview: SI2308CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2308CDS-T1-GE3
N-Channel 60V 2.6A (Tc) 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 60V 2.6A (Tc) 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 60V 2.6A (Tc) 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 60V 2.6A SOT23-3
MOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
N-CHANNEL 60-V (D-S) MOSFET
MOSFET 60V Vds 20V Vgs SOT-23
60V 2.6A 144mΩ@1.9A,10V 1.6W 3V@250uA null SOT-23-3 MOSFETs ROHS
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 894404-SI2308CDS-T1-GE3 | SI2308CDS-T1-GE3 | 278-SI2308CDS-T1-GE3 | SI2308CDS-T1-GE3CT-ND | SI2308CDS-T1-GE3 | 78AC6535 | 26AK9915 | SI2308CDS-T1-GE3 | SI2308CDS-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2308CDS-T1-GE3 | Single FETs, MOSFETs | MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 2.6A, 150Deg C, 1.6W; Transistor Polarity Vishay | N-Channel 60-V (D-S) Mosfet Vishay | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3 | SOT23 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts | 60 volts |
