The Si2308BDS-T1-E3 is an N-channel 60-V MOSFET in the TO-236 (SSOT23) package, designed for battery switching and DC/DC converter applications. It has a maximum continuous drain current of 1.9 A at 25 °C and 1.5 A at 70 °C, with a drain-source on-state resistance of 0.156 Ω at V GS = 10 V and 0.192 Ω at V GS = 4.5 V. The device supports a single-pulse avalanche energy of 1.8 mJ and is rated for a junction and storage temperature range of -55 °C to 150 °C. It is lead (Pb)-free, halogen-free according to IEC 61249-2-21, and RoHS compliant. Thermal resistance is 90 °C/W junction-to-ambient under steady-state conditions when mounted on a 1" x 1" FR4 board.
MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.66W; MSL:- RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC3317 |
| Product Name | Mosfet, N Channel, 60V, 2.3A, Sot-23-3, Full Reel; Channel Type Vishay |
| Polarity | N-Channel |
