Vishay Precision Group MOSFETs SI2308BDS-T1-E3

Description
N-Ch MOSFET SOT-23 60V 130mohm @ 10V - L
Request a Quote Datasheet
Description
N-Ch MOSFET SOT-23 60V 130mohm @ 10V - L
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 1807271 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807271
MOSFETs 1807271
N-Ch MOSFET SOT-23 60V 130mohm @ 10V - L

N-Ch MOSFET SOT-23 60V 130mohm @ 10V - L

Supplier's Site
MOSFETs - 1807752 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807752
MOSFETs 1807752
N-Ch MOSFET SOT-23 60V 130mohm @ 10V - L

N-Ch MOSFET SOT-23 60V 130mohm @ 10V - L

Supplier's Site
MOSFETs - 1807752P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807752P
MOSFETs 1807752P
N-Ch MOSFET SOT-23 60V 130mohm @ 10V - L

N-Ch MOSFET SOT-23 60V 130mohm @ 10V - L

Supplier's Site
Single FETs, MOSFETs - SI2308BDS-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2308BDS-T1-E3
Single FETs, MOSFETs SI2308BDS-T1-E3
MOSFET N-CH 60V 2.3A SOT23-3

MOSFET N-CH 60V 2.3A SOT23-3

Supplier's Site Datasheet
Singapore
60V 1.9A SOT-23 MOSFET Transistor
278-SI2308BDS-T1-E3
60V 1.9A SOT-23 MOSFET Transistor 278-SI2308BDS-T1-E3
N-CH MOSFET, 60V, 1.9A, 156mR, SOT-23 Product overview: SI2308BDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.9A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.9A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2308BDS-T1-E3 can be used for catalog matching and distributor lookup.

N-CH MOSFET, 60V, 1.9A, 156mR, SOT-23 Product overview: SI2308BDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.9A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.9A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2308BDS-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2308BDS-T1-E3 - 064393-SI2308BDS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2308BDS-T1-E3
064393-SI2308BDS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2308BDS-T1-E3 064393-SI2308BDS-T1-E3
Manufacturer: Vishay Win Source Part Number: 064393-SI2308BDS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc) Family Name: Si2308BDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2.3A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 6.8nC @ 10V Max Input Capacitance: 190pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 156 mOhm @ 1.9A, 10V Alternative Parts (Cross-Reference): PMV120ENEAR; PMV230ENEAR; PMV120ENEA; PMV230ENEA; Introduction Date: March 13, 2008 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2022 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 064393-SI2308BDS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Family Name: Si2308BDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.3A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 6.8nC @ 10V
Max Input Capacitance: 190pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 156 mOhm @ 1.9A, 10V
Alternative Parts (Cross-Reference): PMV120ENEAR; PMV230ENEAR; PMV120ENEA; PMV230ENEA;
Introduction Date: March 13, 2008
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 60V Vds 20V Vgs SOT-23

MOSFET 60V Vds 20V Vgs SOT-23

Buy Now Datasheet
Mosfet, N Channel, 60V, 2.3A, Sot-23-3; Channel Type Vishay - 69W7187 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 60V, 2.3A, Sot-23-3; Channel Type Vishay
69W7187
Mosfet, N Channel, 60V, 2.3A, Sot-23-3; Channel Type Vishay 69W7187
MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 60V, 2.3A, Sot-23-3, Full Reel; Channel Type Vishay - 33P5172 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 60V, 2.3A, Sot-23-3, Full Reel; Channel Type Vishay
33P5172
Mosfet, N Channel, 60V, 2.3A, Sot-23-3, Full Reel; Channel Type Vishay 33P5172
MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.66W; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.66W; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2308BDS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2308BDS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2308BDS-T1-E3
MOSFET N-CH 60V 2.3A SOT23-3

MOSFET N-CH 60V 2.3A SOT23-3

Supplier's Site

Technical Specifications

  RS Components, Ltd. ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1807271 SI2308BDS-T1-E3 278-SI2308BDS-T1-E3 064393-SI2308BDS-T1-E3 SI2308BDS-T1-E3 69W7187 33P5172 SI2308BDS-T1-E3
Product Name MOSFETs Single FETs, MOSFETs 60V 1.9A SOT-23 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2308BDS-T1-E3 MOSFET Mosfet, N Channel, 60V, 2.3A, Sot-23-3; Channel Type Vishay Mosfet, N Channel, 60V, 2.3A, Sot-23-3, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) TO-3; SOT23 TO-3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
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