Manufacturer: Vishay
Win Source Part Number: 064393-SI2308BDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Family Name: Si2308BDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.3A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 6.8nC @ 10V
Max Input Capacitance: 190pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 156 mOhm @ 1.9A, 10V
Alternative Parts (Cross-Reference): PMV120ENEAR; PMV230ENEAR; PMV120ENEA; PMV230ENEA;
Introduction Date: March 13, 2008
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
MOSFET N-CH 60V 2.3A SOT23-3
N-CH MOSFET, 60V, 1.9A, 156mR, SOT-23 Product overview: SI2308BDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.9A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.9A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2308BDS-T1-E3 can be used for catalog matching and distributor lookup.
N-Ch MOSFET SOT-23 60V 130mohm @ 10V - L
N-Ch MOSFET SOT-23 60V 130mohm @ 10V - L
N-Ch MOSFET SOT-23 60V 130mohm @ 10V - L
MOSFET N-CH 60V 2.3A SOT23-3
MOSFET 60V Vds 20V Vgs SOT-23
MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; MSL:- RoHS Compliant: Yes
MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.66W; MSL:- RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 064393-SI2308BDS-T1-E3 | SI2308BDS-T1-E3 | 278-SI2308BDS-T1-E3 | 1807271 | SI2308BDS-T1-E3 | SI2308BDS-T1-E3 | 69W7187 | 33P5172 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2308BDS-T1-E3 | Single FETs, MOSFETs | 60V 1.9A SOT-23 MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 60V, 2.3A, Sot-23-3; Channel Type Vishay | Mosfet, N Channel, 60V, 2.3A, Sot-23-3, Full Reel; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 1090 to 1660 milliwatts | 1090 milliwatts | 1660 milliwatts | 1660 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
