Vishay Intertechnology, Inc. P-Channel 3A 30V 0.08ohm MOSFET Transistor SI2307DS-T1-E3

Power Field-Effect Transistor, 3A I(D), 30V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN Product overview: SI2307DS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 3A, 30V, 0.08ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3A, 30V, 0.08ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2307DS-T1-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 189599-SI2307DS-T1-E3
Category: Discrete Semiconductor Products
Family: FETs - Single
Family Name: Si2307DS
Alternative Parts (Cross-Reference): SSM3J14T(T5LMH,F); SSM3J14T(BRA,F); SSM3J14T(T5L,PP);
Introduction Date: April 17, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient