Vishay Intertechnology, Inc. 30V 2.5A SOT-23 MOSFET Transistor SI2307BDS-T1-GE3

P-CH MOSFET, 30V, 2.5A, 78mR, SOT-23-3, Small Signal Product overview: SI2307BDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.5A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.5A, SOT-23, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI2307BDS-T1-GE3 can be used for catalog matching and distributor lookup.

P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

MOSFET P-CH 30V 2.5A SOT23-3

Manufacturer: Vishay
Win Source Part Number: 1095730-SI2307BDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 380pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 78 mOhm @ 3.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient