Power Field-Effect Transistor, 3.5A I(D), 30V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Product overview: SI2306DS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 3.5A, 30V, 0.057ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3.5A, 30V, 0.057ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2306DS-T1-E3 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2306DS-T1-E3 |
| Product Name | N-Channel 3.5A 30V 0.057ohm MOSFET Transistor |
| Polarity | N-Channel |