Manufacturer: Vishay
Win Source Part Number: 028370-SI2306BDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.16A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 4.5nC @ 5V
Max Input Capacitance: 305pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 47 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
N-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 30V 3.16A SOT23-3
MOSFET N-CH 30V 3.16A SOT23-3 Product overview: SI2306BDS-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.16A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.16A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2306BDS-T1-GE3
MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
MOSFET N-CH 30V 3.16A SOT23-3
N CHANNEL MOSFET, 30V, 4A, TO-236; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028370-SI2306BDS-T1-GE3 | SI2306BDS-T1-GE3DKR-ND | SI2306BDS-T1-GE3 | 278-SI2306BDS-T1-GE3 | SI2306BDS-T1-GE3 | SI2306BDS-T1-GE3 | 16P3706 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2306BDS-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | 30V 3.16A SOT23 MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 4A, To-236; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 |
