Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305DS-T1-E3 SI2305DS-T1-E3

Manufacturer: Vishay Win Source Part Number: 103786-SI2305DS-T1-E 3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.25W (Ta) Family Name: Si2305DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1245pF @ 4V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 52 mOhm @ 3.5A, 4.5V Alternative Parts (Cross-Reference): NTR2101PT1; NTR2101P; NTR2101PT1G; SI2305-TP-HF; Introduction Date: April 17, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Portable Devices

MOSFET P-CH 8V 3.5A SOT23-3