Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305DS-T1-E3 SI2305DS-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 103786-SI2305DS-T1-E 3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.25W (Ta) Family Name: Si2305DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1245pF @ 4V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 52 mOhm @ 3.5A, 4.5V Alternative Parts (Cross-Reference): NTR2101PT1; NTR2101P; NTR2101PT1G; SI2305-TP-HF; Introduction Date: April 17, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Portable Devices
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Description
Manufacturer: Vishay Win Source Part Number: 103786-SI2305DS-T1-E 3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.25W (Ta) Family Name: Si2305DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1245pF @ 4V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 52 mOhm @ 3.5A, 4.5V Alternative Parts (Cross-Reference): NTR2101PT1; NTR2101P; NTR2101PT1G; SI2305-TP-HF; Introduction Date: April 17, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Portable Devices
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305DS-T1-E3 - 103786-SI2305DS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305DS-T1-E3
103786-SI2305DS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305DS-T1-E3 103786-SI2305DS-T1-E3
Manufacturer: Vishay Win Source Part Number: 103786-SI2305DS-T1-E 3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.25W (Ta) Family Name: Si2305DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1245pF @ 4V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 52 mOhm @ 3.5A, 4.5V Alternative Parts (Cross-Reference): NTR2101PT1; NTR2101P; NTR2101PT1G; SI2305-TP-HF; Introduction Date: April 17, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Portable Devices

Manufacturer: Vishay
Win Source Part Number: 103786-SI2305DS-T1-E3
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.25W (Ta)
Family Name: Si2305DS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1245pF @ 4V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 52 mOhm @ 3.5A, 4.5V
Alternative Parts (Cross-Reference): NTR2101PT1; NTR2101P; NTR2101PT1G; SI2305-TP-HF;
Introduction Date: April 17, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Portable Devices

Buy Now Datasheet
Single FETs, MOSFETs - SI2305DS-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2305DS-T1-E3
Single FETs, MOSFETs SI2305DS-T1-E3
MOSFET P-CH 8V 3.5A SOT23-3

MOSFET P-CH 8V 3.5A SOT23-3

Supplier's Site Datasheet
Singapore
8V 3.5A SOT23 MOSFET Transistor
278-SI2305DS-T1-E3
8V 3.5A SOT23 MOSFET Transistor 278-SI2305DS-T1-E3
MOSFET P-CH 8V 3.5A SOT23-3 Product overview: SI2305DS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 3.5A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 3.5A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2305DS-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 8V 3.5A SOT23-3 Product overview: SI2305DS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 3.5A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 3.5A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2305DS-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2305DS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2305DS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2305DS-T1-E3
MOSFET P-CH 8V 3.5A SOT23-3

MOSFET P-CH 8V 3.5A SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 103786-SI2305DS-T1-E3 SI2305DS-T1-E3 278-SI2305DS-T1-E3 SI2305DS-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305DS-T1-E3 Single FETs, MOSFETs 8V 3.5A SOT23 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel
V(BR)DSS 8 volts 8 volts
PD 1250 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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