Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305ADS-T1-E3 SI2305ADS-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 114120-SI2305ADS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Family Name: Si2305ADS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 5.4A (Tc) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 740pF @ 4V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.1A, 4.5V Alternative Parts (Cross-Reference): SI2305-TP-HF; SI2305-TP; TSM2305CX RFG; Si2305CDS-T1-GE3; Introduction Date: February 07, 2008 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Portable Devices
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Description
Manufacturer: Vishay Win Source Part Number: 114120-SI2305ADS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Family Name: Si2305ADS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 5.4A (Tc) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 740pF @ 4V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.1A, 4.5V Alternative Parts (Cross-Reference): SI2305-TP-HF; SI2305-TP; TSM2305CX RFG; Si2305CDS-T1-GE3; Introduction Date: February 07, 2008 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Portable Devices
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305ADS-T1-E3 - 114120-SI2305ADS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305ADS-T1-E3
114120-SI2305ADS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305ADS-T1-E3 114120-SI2305ADS-T1-E3
Manufacturer: Vishay Win Source Part Number: 114120-SI2305ADS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Family Name: Si2305ADS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 5.4A (Tc) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 740pF @ 4V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.1A, 4.5V Alternative Parts (Cross-Reference): SI2305-TP-HF; SI2305-TP; TSM2305CX RFG; Si2305CDS-T1-GE3; Introduction Date: February 07, 2008 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Portable Devices

Manufacturer: Vishay
Win Source Part Number: 114120-SI2305ADS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Family Name: Si2305ADS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 5.4A (Tc)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 740pF @ 4V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.1A, 4.5V
Alternative Parts (Cross-Reference): SI2305-TP-HF; SI2305-TP; TSM2305CX RFG; Si2305CDS-T1-GE3;
Introduction Date: February 07, 2008
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Portable Devices

Buy Now Datasheet
Singapore, Singapore
8V 5.4A SOT23 MOSFET Transistor
278-SI2305ADS-T1-E3
8V 5.4A SOT23 MOSFET Transistor 278-SI2305ADS-T1-E3
MOSFET P-CH 8V 5.4A SOT23-3 Product overview: SI2305ADS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 5.4A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 5.4A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2305ADS-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 8V 5.4A SOT23-3 Product overview: SI2305ADS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 5.4A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 5.4A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2305ADS-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2305ADS-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2305ADS-T1-E3TR-ND
Single FETs, MOSFETs SI2305ADS-T1-E3TR-ND
P-Channel 8V 5.4A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 8V 5.4A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2305ADS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2305ADS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2305ADS-T1-E3
MOSFET P-CH 8V 5.4A SOT23-3

MOSFET P-CH 8V 5.4A SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 114120-SI2305ADS-T1-E3 278-SI2305ADS-T1-E3 SI2305ADS-T1-E3TR-ND SI2305ADS-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305ADS-T1-E3 8V 5.4A SOT23 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 8 volts
PD 960 to 1700 milliwatts 960 milliwatts
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