Vishay Intertechnology, Inc. Single FETs, MOSFETs SI2305ADS-T1-E3

Description
P-Channel 8V 5.4A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet
Description
P-Channel 8V 5.4A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2305ADS-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2305ADS-T1-E3TR-ND
Single FETs, MOSFETs SI2305ADS-T1-E3TR-ND
P-Channel 8V 5.4A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 8V 5.4A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305ADS-T1-E3 - 114120-SI2305ADS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305ADS-T1-E3
114120-SI2305ADS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305ADS-T1-E3 114120-SI2305ADS-T1-E3
Manufacturer: Vishay Win Source Part Number: 114120-SI2305ADS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Family Name: Si2305ADS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 5.4A (Tc) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 740pF @ 4V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.1A, 4.5V Alternative Parts (Cross-Reference): SI2305-TP-HF; SI2305-TP; TSM2305CX RFG; Si2305CDS-T1-GE3; Introduction Date: February 07, 2008 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Portable Devices

Manufacturer: Vishay
Win Source Part Number: 114120-SI2305ADS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Family Name: Si2305ADS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 5.4A (Tc)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 740pF @ 4V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.1A, 4.5V
Alternative Parts (Cross-Reference): SI2305-TP-HF; SI2305-TP; TSM2305CX RFG; Si2305CDS-T1-GE3;
Introduction Date: February 07, 2008
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Portable Devices

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2305ADS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2305ADS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2305ADS-T1-E3
MOSFET P-CH 8V 5.4A SOT23-3

MOSFET P-CH 8V 5.4A SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI2305ADS-T1-E3TR-ND 114120-SI2305ADS-T1-E3 SI2305ADS-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2305ADS-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) 15 nC @ 4.5 V
V(BR)DSS 8 volts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - AUIRFP1405-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-247; TO-247-3
Transistor Grade / Operating Range Automotive
View Details
4 suppliers
DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor - QPD0030 - Qorvo
Specs
Transistor Technology / Material DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
3 suppliers
GaAs Fet Switches - KCB817 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 6000 MHz
View Details