N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
TRANSISTOR 2600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal Product overview: SI2304BDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 2600 mA, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2600 mA, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2304BDS-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028366-SI2304BDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 4nC @ 5V
Max Input Capacitance: 225pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 70 mOhm @ 2.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
MOSFET N-CH 30V 2.6A SOT23-3
MOSFET N-CH 30V 2.6A SOT23-3
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:1.08W; No. of Pins:3Pins RoHS Compliant: Yes
N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI2304BDS-T1-E3TR-ND | 278-SI2304BDS-T1-E3 | 028366-SI2304BDS-T1-E3 | SI2304BDS-T1-E3 | SI2304BDS-T1-E3 | SI2304BDS-T1-E3 | 85W2138 | 43J1066 |
| Product Name | Single FETs, MOSFETs | N-Channel 2600 mA 30 V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2304BDS-T1-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Channel Type Vishay | N Channel Mosfet, Full Reel; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3 | ||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 750 milliwatts | 750 milliwatts |
