P-channel MOSFET in a TO-236 (SOT-23) package, rated for a drain-source voltage of -30 V and continuous drain current of -1.9 A at 25 °C ambient temperature. The device has a maximum on-state resistance of 0.190 Ω at -10 V gate-source voltage and 0.330 Ω at -4.5 V gate-source voltage. It is lead-free and halogen-free according to IEC 61249-2-21, with a junction temperature range from -55 °C to 150 °C and a thermal resistance of 80 °C/W from junction to ambient. The gate charge is 4 nC at -15 V drain-source voltage. Applications include load switching.
MOSFET, P CH, -30V, -2.7A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3VRoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 28AC2123 |
| Product Name | Mosfet, P Ch, -30V, -2.7A, Sot-23-3, Full Reel; Channel Type Vishay |
| IDSS | 2700 milliamps |
