Vishay Precision Group Single FETs, MOSFETs SI2303BDS-T1-E3

Description
P-Channel 30V 1.49A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
  • Single FETs, MOSFETs - SI2303BDS-T1-E3TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SI2303BDS-T1-E3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303BDS-T1-E3 - 096289-SI2303BDS-T1-E3 - Win Source Electronics
    Win Source Electronics
  • P Channel Mosfet, -30V, 1.49A, To-236; Channel Type Vishay - 06J7566 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2303BDS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-Channel 30V 1.49A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2303BDS-T1-E3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2303BDS-T1-E3TR-ND
Single FETs, MOSFETs SI2303BDS-T1-E3TR-ND
P-Channel 30V 1.49A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 1.49A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2303BDS-T1-E3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2303BDS-T1-E3
Single FETs, MOSFETs SI2303BDS-T1-E3
MOSFET P-CH 30V 1.49A SOT23-3

MOSFET P-CH 30V 1.49A SOT23-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303BDS-T1-E3 - 096289-SI2303BDS-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303BDS-T1-E3
096289-SI2303BDS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303BDS-T1-E3 096289-SI2303BDS-T1-E3
Manufacturer: Vishay Win Source Part Number: 096289-SI2303BDS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.49A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 180pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 1.7A, 10V Alternative Parts (Cross-Reference): FDN352AP; Si2303BDS; Si2303BDS-T1; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 096289-SI2303BDS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.49A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 180pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1.7A, 10V
Alternative Parts (Cross-Reference): FDN352AP; Si2303BDS; Si2303BDS-T1;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
P Channel Mosfet, -30V, 1.49A, To-236; Channel Type Vishay - 06J7566 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -30V, 1.49A, To-236; Channel Type Vishay
06J7566
P Channel Mosfet, -30V, 1.49A, To-236; Channel Type Vishay 06J7566
P CHANNEL MOSFET, -30V, 1.49A, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.49A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

P CHANNEL MOSFET, -30V, 1.49A, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.49A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2303BDS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2303BDS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2303BDS-T1-E3
MOSFET P-CH 30V 1.49A SOT23-3

MOSFET P-CH 30V 1.49A SOT23-3

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI2303BDS-T1-E3TR-ND SI2303BDS-T1-E3 096289-SI2303BDS-T1-E3 06J7566 SI2303BDS-T1-E3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303BDS-T1-E3 P Channel Mosfet, -30V, 1.49A, To-236; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) TO-3 SOT23; TO-236-3, SC-59, SOT-23-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
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