MOSFET P-CH 30V 1.49A SOT23-3 Product overview: SI2303BDS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.49A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.49A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2303BDS-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 1.49A SOT23-3
P-Channel 30V 1.49A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Manufacturer: Vishay
Win Source Part Number: 096289-SI2303BDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.49A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 180pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1.7A, 10V
Alternative Parts (Cross-Reference): FDN352AP; Si2303BDS; Si2303BDS-T1;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 30V 1.49A SOT23-3
P CHANNEL MOSFET, -30V, 1.49A, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.49A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2303BDS-T1-E3 | SI2303BDS-T1-E3 | SI2303BDS-T1-E3TR-ND | 096289-SI2303BDS-T1-E3 | SI2303BDS-T1-E3 | 06J7566 |
| Product Name | 30V 1.49A SOT23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2303BDS-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -30V, 1.49A, To-236; Channel Type Vishay |
| PD | 700 milliwatts | 700 milliwatts | 700 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
