Vishay Precision Group Single FETs, MOSFETs SI2302DDS-T1-GE3

Description
MOSFET N-CH 20V 2.9A SOT23-3
Request a Quote Datasheet
Description
MOSFET N-CH 20V 2.9A SOT23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2302DDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2302DDS-T1-GE3
Single FETs, MOSFETs SI2302DDS-T1-GE3
MOSFET N-CH 20V 2.9A SOT23-3

MOSFET N-CH 20V 2.9A SOT23-3

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2302DDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2302DDS-T1-GE3CT-ND
Single FETs, MOSFETs SI2302DDS-T1-GE3CT-ND
N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2302DDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2302DDS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2302DDS-T1-GE3DKR-ND
N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2302DDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2302DDS-T1-GE3TR-ND
Single FETs, MOSFETs SI2302DDS-T1-GE3TR-ND
N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
MOSFETs - 1526358P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1526358P
MOSFETs 1526358P
N-channel MOSFET 20V 2.6A 75mOhm SOT-23

N-channel MOSFET 20V 2.6A 75mOhm SOT-23

Supplier's Site
MOSFETs - 1464437 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1464437
MOSFETs 1464437
N-channel MOSFET 20V 2.6A 75mOhm SOT-23

N-channel MOSFET 20V 2.6A 75mOhm SOT-23

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302DDS-T1-GE3 - 1095726-SI2302DDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302DDS-T1-GE3
1095726-SI2302DDS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302DDS-T1-GE3 1095726-SI2302DDS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095726-SI2302DDS-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 710mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.9A (Tj) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 5.5nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 57 mOhm @ 3.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095726-SI2302DDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 710mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.9A (Tj)
Gate-Source Threshold Voltage: 850mV @ 250μA
Max Gate Charge: 5.5nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 57 mOhm @ 3.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2302DDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2302DDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2302DDS-T1-GE3
MOSFET N-CH 20V 2.9A SOT23-3

MOSFET N-CH 20V 2.9A SOT23-3

Supplier's Site
MOSFET 20V Vds 8V Vgs SOT-23

MOSFET 20V Vds 8V Vgs SOT-23

Buy Now Datasheet
Mosfet, N-Ch, 20V, 2.6A, 150Deg C, 0.71W; Transistor Polarity Vishay - 70AC6493 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 2.6A, 150Deg C, 0.71W; Transistor Polarity Vishay
70AC6493
Mosfet, N-Ch, 20V, 2.6A, 150Deg C, 0.71W; Transistor Polarity Vishay 70AC6493
MOSFET, N-CH, 20V, 2.6A, 150DEG C, 0.71W; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5VRoHS Compliant: Yes

MOSFET, N-CH, 20V, 2.6A, 150DEG C, 0.71W; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5VRoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 2.6 A, 20 V, 0.045 Ohm, 4.5 V Rohs Compliant Vishay - 40X8696 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 2.6 A, 20 V, 0.045 Ohm, 4.5 V Rohs Compliant Vishay
40X8696
Mosfet Transistor, N Channel, 2.6 A, 20 V, 0.045 Ohm, 4.5 V Rohs Compliant Vishay 40X8696
MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey RS Components, Ltd. RS Components, Ltd. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI2302DDS-T1-GE3 SI2302DDS-T1-GE3CT-ND 1526358P 1464437 1095726-SI2302DDS-T1-GE3 SI2302DDS-T1-GE3 SI2302DDS-T1-GE3 70AC6493 40X8696
Product Name Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302DDS-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 20V, 2.6A, 150Deg C, 0.71W; Transistor Polarity Vishay Mosfet Transistor, N Channel, 2.6 A, 20 V, 0.045 Ohm, 4.5 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 2900 milliamps 2600 milliamps
PD 710 milliwatts 710 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB820 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 6000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SC2688-AZ - 906351-2SC2688-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor - QPD1016L - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-780
View Details
2 suppliers