MOSFET N-CH 20V 2.9A SOT23-3
N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-channel MOSFET 20V 2.6A 75mOhm SOT-23
N-channel MOSFET 20V 2.6A 75mOhm SOT-23
Manufacturer: Vishay
Win Source Part Number: 1095726-SI2302DDS-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 710mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.9A (Tj)
Gate-Source Threshold Voltage: 850mV @ 250μA
Max Gate Charge: 5.5nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 57 mOhm @ 3.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 20V 2.9A SOT23-3
MOSFET, N-CH, 20V, 2.6A, 150DEG C, 0.71W; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5VRoHS Compliant: Yes
MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI2302DDS-T1-GE3 | SI2302DDS-T1-GE3CT-ND | 1526358P | 1464437 | 1095726-SI2302DDS-T1-GE3 | SI2302DDS-T1-GE3 | SI2302DDS-T1-GE3 | 70AC6493 | 40X8696 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302DDS-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 20V, 2.6A, 150Deg C, 0.71W; Transistor Polarity Vishay | Mosfet Transistor, N Channel, 2.6 A, 20 V, 0.045 Ohm, 4.5 V Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| IDSS | 2900 milliamps | 2600 milliamps | |||||||
| PD | 710 milliwatts | 710 milliwatts |
