Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302DDS-T1-GE3 SI2302DDS-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1095726-SI2302DDS-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 710mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.9A (Tj) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 5.5nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 57 mOhm @ 3.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1095726-SI2302DDS-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 710mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.9A (Tj) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 5.5nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 57 mOhm @ 3.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302DDS-T1-GE3 - 1095726-SI2302DDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302DDS-T1-GE3
1095726-SI2302DDS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302DDS-T1-GE3 1095726-SI2302DDS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095726-SI2302DDS-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 710mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.9A (Tj) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 5.5nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 57 mOhm @ 3.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095726-SI2302DDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 710mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.9A (Tj)
Gate-Source Threshold Voltage: 850mV @ 250μA
Max Gate Charge: 5.5nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 57 mOhm @ 3.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
MOSFETs - 1526358P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1526358P
MOSFETs 1526358P
N-channel MOSFET 20V 2.6A 75mOhm SOT-23

N-channel MOSFET 20V 2.6A 75mOhm SOT-23

Supplier's Site
MOSFETs - 1464437 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1464437
MOSFETs 1464437
N-channel MOSFET 20V 2.6A 75mOhm SOT-23

N-channel MOSFET 20V 2.6A 75mOhm SOT-23

Supplier's Site
Single FETs, MOSFETs - SI2302DDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2302DDS-T1-GE3CT-ND
Single FETs, MOSFETs SI2302DDS-T1-GE3CT-ND
N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2302DDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2302DDS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2302DDS-T1-GE3DKR-ND
N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2302DDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2302DDS-T1-GE3TR-ND
Single FETs, MOSFETs SI2302DDS-T1-GE3TR-ND
N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2302DDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2302DDS-T1-GE3
Single FETs, MOSFETs SI2302DDS-T1-GE3
MOSFET N-CH 20V 2.9A SOT23-3

MOSFET N-CH 20V 2.9A SOT23-3

Supplier's Site Datasheet
Singapore
N-Channel 20V 2.9A SOT-23 MOSFET Transistor
278-SI2302DDS-T1-GE3
N-Channel 20V 2.9A SOT-23 MOSFET Transistor 278-SI2302DDS-T1-GE3
N-Channel MOSFET, 20V, 2.9A, 57mR RdsOn, SOT-23 Product overview: SI2302DDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 2.9A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.9A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2302DDS-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 20V, 2.9A, 57mR RdsOn, SOT-23 Product overview: SI2302DDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 2.9A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.9A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2302DDS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2302DDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2302DDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2302DDS-T1-GE3
MOSFET N-CH 20V 2.9A SOT23-3

MOSFET N-CH 20V 2.9A SOT23-3

Supplier's Site
MOSFET 20V Vds 8V Vgs SOT-23

MOSFET 20V Vds 8V Vgs SOT-23

Buy Now Datasheet
Mosfet, N-Ch, 20V, 2.6A, 150Deg C, 0.71W; Transistor Polarity Vishay - 70AC6493 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 2.6A, 150Deg C, 0.71W; Transistor Polarity Vishay
70AC6493
Mosfet, N-Ch, 20V, 2.6A, 150Deg C, 0.71W; Transistor Polarity Vishay 70AC6493
MOSFET, N-CH, 20V, 2.6A, 150DEG C, 0.71W; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5VRoHS Compliant: Yes

MOSFET, N-CH, 20V, 2.6A, 150DEG C, 0.71W; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5VRoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 2.6 A, 20 V, 0.045 Ohm, 4.5 V Rohs Compliant Vishay - 40X8696 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 2.6 A, 20 V, 0.045 Ohm, 4.5 V Rohs Compliant Vishay
40X8696
Mosfet Transistor, N Channel, 2.6 A, 20 V, 0.045 Ohm, 4.5 V Rohs Compliant Vishay 40X8696
MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1095726-SI2302DDS-T1-GE3 1526358P 1464437 SI2302DDS-T1-GE3CT-ND SI2302DDS-T1-GE3 278-SI2302DDS-T1-GE3 SI2302DDS-T1-GE3 SI2302DDS-T1-GE3 70AC6493 40X8696
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302DDS-T1-GE3 MOSFETs MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 20V 2.9A SOT-23 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 20V, 2.6A, 150Deg C, 0.71W; Transistor Polarity Vishay Mosfet Transistor, N Channel, 2.6 A, 20 V, 0.045 Ohm, 4.5 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 710 milliwatts 710 milliwatts 710 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type SOT3; SOT23; SOT-23-3 (TO-236) SOT23; SOT-23 SOT23; Sot-23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-3
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