N-Channel MOSFET, 20V, 2.6A, 57mR Rds On, SOT-23 Product overview: SI2302CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 2.6A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.6A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2302CDS-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 028363-SI2302CDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 710mW (Ta)
Family Name: Si2302CDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 850mV @ 250μA
Max Gate Charge: 5.5nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 57 mOhm @ 3.6A, 4.5V
Alternative Parts (Cross-Reference): ZXMN2A14F; AO3430; ZXMN2A14FTA;
Introduction Date: July 29, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Portable Devices
N-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 20V 2.6A SOT23-3
MOSFET N-CH 20V 2.6A SOT23-3
MOSFET N-CH 20V 2.6A SOT23-3
MOSFET, N CHANNEL, 20V, 0.045OHM, 2.6A, TO-236, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V; Power Dissipation:710mW RoHS Compliant: Yes
N CHANNEL MOSFET, 20V, 2.9A, TO-236; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V; Gate Source Threshold Voltage Max:850mV; MSL:-RoHS Compliant: Yes
MOSFET Transistor, N Channel, 2.9 A, 20 V, 0.045 ohm, 8 V, 850 mV RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2302CDS-T1-GE3 | 028363-SI2302CDS-T1-GE3 | SI2302CDS-T1-GE3DKR-ND | 880-SI2302CDS-T1-GE3 | SI2302CDS-T1-GE3 | SI2302CDS-T1-GE3 | SI2302CDS-T1-GE3 | 73W9408 | 16P3702 | 40P0795 |
| Product Name | N-Channel 20V 2.6A SOT-23 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302CDS-T1-GE3 | Single FETs, MOSFETs | MOSFET N-CH 20V 2.6A SOT23-3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, N Channel, 20V, 0.045Ohm, 2.6A, To-236, Full Reel; Channel Type Vishay | N Channel Mosfet, 20V, 2.9A, To-236; Channel Type Vishay | Mosfet Transistor, N Channel, 2.9 A, 20 V, 0.045 Ohm, 8 V, 850 Mv Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 710 milliwatts | 710 milliwatts | 710 milliwatts | 710 milliwatts | 710 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3 | TO-3 |
