The Si2302CDS-T1-GE3 is an N-channel 20 V MOSFET in a TO-236 (SOT-23) package, designed for load switching and DC/DC conversion in portable devices. It has a maximum continuous drain current of 2.6 A at 70 °C and a typical on-state resistance of 0.057 Ω at 4.5 V gate bias. The device features a gate-source voltage rating of ±8 V, an operating junction temperature range of −55 to 150 °C, and is lead-free and halogen-free. It meets RoHS and JEDEC JS709A halogen-free standards.
MOSFET, N CHANNEL, 20V, 0.045OHM, 2.6A, TO-236, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V; Power Dissipation:710mW RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 28AC2121 |
| Product Name | Mosfet, N Channel, 20V, 0.045Ohm, 2.6A, To-236, Full Reel; Channel Type Vishay |
| Polarity | N-Channel |
