Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302ADS-T1-E3 SI2302ADS-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028362-SI2302ADS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 700mW (Ta) Family Name: Si2302ADS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.1A (Ta) Gate-Source Threshold Voltage: 1.2V @ 50μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 300pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 60 mOhm @ 3.6A, 4.5V Alternative Parts (Cross-Reference): SI2302DS,215; PMV56XN,215; CEN2306; Introduction Date: April 30, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Portable Devices
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028362-SI2302ADS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 700mW (Ta) Family Name: Si2302ADS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.1A (Ta) Gate-Source Threshold Voltage: 1.2V @ 50μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 300pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 60 mOhm @ 3.6A, 4.5V Alternative Parts (Cross-Reference): SI2302DS,215; PMV56XN,215; CEN2306; Introduction Date: April 30, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Portable Devices
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302ADS-T1-E3 - 028362-SI2302ADS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302ADS-T1-E3
028362-SI2302ADS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302ADS-T1-E3 028362-SI2302ADS-T1-E3
Manufacturer: Vishay Win Source Part Number: 028362-SI2302ADS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 700mW (Ta) Family Name: Si2302ADS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.1A (Ta) Gate-Source Threshold Voltage: 1.2V @ 50μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 300pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 60 mOhm @ 3.6A, 4.5V Alternative Parts (Cross-Reference): SI2302DS,215; PMV56XN,215; CEN2306; Introduction Date: April 30, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Portable Devices

Manufacturer: Vishay
Win Source Part Number: 028362-SI2302ADS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: Si2302ADS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.1A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 50μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 300pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.6A, 4.5V
Alternative Parts (Cross-Reference): SI2302DS,215; PMV56XN,215; CEN2306;
Introduction Date: April 30, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Portable Devices

Buy Now Datasheet
Singapore
20V 2.1A SOT23 MOSFET Transistor
278-SI2302ADS-T1-E3
20V 2.1A SOT23 MOSFET Transistor 278-SI2302ADS-T1-E3
MOSFET N-CH 20V 2.1A SOT23-3 Product overview: SI2302ADS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.1A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.1A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2302ADS-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 2.1A SOT23-3 Product overview: SI2302ADS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.1A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.1A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2302ADS-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2302ADS-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2302ADS-T1-E3
Single FETs, MOSFETs SI2302ADS-T1-E3
MOSFET N-CH 20V 2.1A SOT23-3

MOSFET N-CH 20V 2.1A SOT23-3

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2302ADS-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2302ADS-T1-E3TR-ND
Single FETs, MOSFETs SI2302ADS-T1-E3TR-ND
N-Channel 20V 2.1A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 20V 2.1A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2302ADS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2302ADS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2302ADS-T1-E3
MOSFET N-CH 20V 2.1A SOT23-3

MOSFET N-CH 20V 2.1A SOT23-3

Supplier's Site
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.045Ohm;ID 2.1A;TO-236 (SOT-23);PD 0.7W
70026064
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.045Ohm;ID 2.1A;TO-236 (SOT-23);PD 0.7W 70026064
Features: Halogen-free Option Available

Features:

  • Halogen-free Option Available
Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028362-SI2302ADS-T1-E3 278-SI2302ADS-T1-E3 SI2302ADS-T1-E3 SI2302ADS-T1-E3TR-ND SI2302ADS-T1-E3 70026064
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302ADS-T1-E3 20V 2.1A SOT23 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.045Ohm;ID 2.1A;TO-236 (SOT-23);PD 0.7W
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 700 milliwatts 700 milliwatts 700 milliwatts 700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT-23-3 (TO-236) Tape & Reel (TR) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23
Unlock Full Specs
to access all available technical data