N-Channel 20V 2.1A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Manufacturer: Vishay
Win Source Part Number: 028362-SI2302ADS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: Si2302ADS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.1A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 50μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 300pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.6A, 4.5V
Alternative Parts (Cross-Reference): SI2302DS,215; PMV56XN,215; CEN2306;
Introduction Date: April 30, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Portable Devices
MOSFET N-CH 20V 2.1A SOT23-3 Product overview: SI2302ADS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.1A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.1A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2302ADS-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 2.1A SOT23-3
Features:
MOSFET N-CH 20V 2.1A SOT23-3
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI2302ADS-T1-E3TR-ND | 028362-SI2302ADS-T1-E3 | 278-SI2302ADS-T1-E3 | SI2302ADS-T1-E3 | 70026064 | SI2302ADS-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2302ADS-T1-E3 | 20V 2.1A SOT23 MOSFET Transistor | Single FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.045Ohm;ID 2.1A;TO-236 (SOT-23);PD 0.7W | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 |
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||
| PD | 700 milliwatts | 700 milliwatts | 700 milliwatts | 700 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
