MOSFET P-CH 20V 3.1A SOT23-3
P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
P-CH MOSFET, 20V, 2.3A, 112mR, SOT-23, Small Signal Product overview: SI2301CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2301CDS-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 028358-SI2301CDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Family Name: SI2301CDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 405pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 112 mOhm @ 2.8A, 4.5V
Alternative Parts (Cross-Reference): SSM3J317T(T5L,F,T); SSM3J317T; SSM3J317T(TE85LF); CPH3356-TL-W;
Introduction Date: July 29, 2008
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
MOSFET P-CH 20V 3.1A SOT23-3
20V 3.1A 112mΩ@4.5V,2.8A 1V@250uA P Channel SOT-23 MOSFETs ROHS
P CHANNEL MOSFET, -20V, -3.1A TO-236; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes
MOSFET Transistor, P Channel, -3.1 A, -20 V, 90 mohm, -4.5 V, -400 mV RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 3.1A TO-236, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.1A; On Resistance Rds(on):0.142ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET, P-CH, 20V, 3.1A, TO-236 ROHS COMPLIANT: YES
MOSFET -20V Vds 8V Vgs SOT-23
| RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 7103238 | 7103238P | SI2301CDS-T1-GE3 | SI2301CDS-T1-GE3TR-ND | 278-SI2301CDS-T1-GE3 | 028358-SI2301CDS-T1-GE3 | SI2301CDS-T1-GE3 | SI2301CDS-T1-GE3 | 16P3701 | 55R1908 | 85W0172 | 96AJ0103 | SI2301CDS-T1-GE3 |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | 20V 2.3A SOT-23 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301CDS-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | P Channel Mosfet, -20V, -3.1A To-236; Channel Type Vishay | Mosfet Transistor, P Channel, -3.1 A, -20 V, 90 Mohm, -4.5 V, -400 Mv Rohs Compliant Vishay | P Channel Mosfet, -20V, 3.1A To-236, Full Reel; Transistor Polarity Vishay | Mosfet, P-Ch, 20V, 3.1A, To-236 Rohs Compliant Vishay | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||||||||
| Package Type | SOT23; Sot-23 | SOT23; SOT-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | TO-3 | TO-3 | TO-3 | TO-3 | ||
| Number of units in IC | 1 | ||||||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
