Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301CDS-T1-E3 SI2301CDS-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 117471-SI2301CDS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 860mW (Ta), 1.6W (Tc) Family Name: SI2301CDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 405pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 112 mOhm @ 2.8A, 4.5V Alternative Parts (Cross-Reference): AF2301PW; AF2301PWLA; FDN308P_NL; AF2301PWL; Introduction Date: July 29, 2008 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 117471-SI2301CDS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 860mW (Ta), 1.6W (Tc) Family Name: SI2301CDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 405pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 112 mOhm @ 2.8A, 4.5V Alternative Parts (Cross-Reference): AF2301PW; AF2301PWLA; FDN308P_NL; AF2301PWL; Introduction Date: July 29, 2008 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301CDS-T1-E3 - 117471-SI2301CDS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301CDS-T1-E3
117471-SI2301CDS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301CDS-T1-E3 117471-SI2301CDS-T1-E3
Manufacturer: Vishay Win Source Part Number: 117471-SI2301CDS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 860mW (Ta), 1.6W (Tc) Family Name: SI2301CDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 405pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 112 mOhm @ 2.8A, 4.5V Alternative Parts (Cross-Reference): AF2301PW; AF2301PWLA; FDN308P_NL; AF2301PWL; Introduction Date: July 29, 2008 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 117471-SI2301CDS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Family Name: SI2301CDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 405pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 112 mOhm @ 2.8A, 4.5V
Alternative Parts (Cross-Reference): AF2301PW; AF2301PWLA; FDN308P_NL; AF2301PWL;
Introduction Date: July 29, 2008
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 1807269 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807269
MOSFETs 1807269
P-Ch MOSFET SOT-23 20V 112mohm @ 4.5V

P-Ch MOSFET SOT-23 20V 112mohm @ 4.5V

Supplier's Site
MOSFETs - 1807719 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807719
MOSFETs 1807719
P-Ch MOSFET SOT-23 20V 112mohm @ 4.5V

P-Ch MOSFET SOT-23 20V 112mohm @ 4.5V

Supplier's Site
MOSFETs - 1807719P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807719P
MOSFETs 1807719P
P-Ch MOSFET SOT-23 20V 112mohm @ 4.5V

P-Ch MOSFET SOT-23 20V 112mohm @ 4.5V

Supplier's Site
Single FETs, MOSFETs - SI2301CDS-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301CDS-T1-E3DKR-ND
Single FETs, MOSFETs SI2301CDS-T1-E3DKR-ND
P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2301CDS-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301CDS-T1-E3TR-ND
Single FETs, MOSFETs SI2301CDS-T1-E3TR-ND
P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2301CDS-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301CDS-T1-E3CT-ND
Single FETs, MOSFETs SI2301CDS-T1-E3CT-ND
P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Singapore, Singapore
P-Channel 20V 3.1A SOT-23 MOSFET Transistor
278-SI2301CDS-T1-E3
P-Channel 20V 3.1A SOT-23 MOSFET Transistor 278-SI2301CDS-T1-E3
P-Channel MOSFET, 20V, 3.1A, SOT-23, Small Signal Product overview: SI2301CDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V, 3.1A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.1A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2301CDS-T1-E3 can be used for catalog matching and distributor lookup.

P-Channel MOSFET, 20V, 3.1A, SOT-23, Small Signal Product overview: SI2301CDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V, 3.1A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.1A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2301CDS-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -20V Vds 8V Vgs SOT-23

MOSFET -20V Vds 8V Vgs SOT-23

Buy Now Datasheet
Single FETs, MOSFETs - SI2301CDS-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2301CDS-T1-E3
Single FETs, MOSFETs SI2301CDS-T1-E3
MOSFET P-CH 20V 3.1A SOT23-3

MOSFET P-CH 20V 3.1A SOT23-3

Supplier's Site Datasheet
20V 3.1A 1.6W 112mΩ@4.5V,2.8A 1V@250uA P Channel SOT-23(SOT-23-3) MOSFETs ROHS - 17930-SI2301CDS-T1-E3 - Utmel Electronic Limited
Hong Kong, China
20V 3.1A 1.6W 112mΩ@4.5V,2.8A 1V@250uA P Channel SOT-23(SOT-23-3) MOSFETs ROHS
17930-SI2301CDS-T1-E3
20V 3.1A 1.6W 112mΩ@4.5V,2.8A 1V@250uA P Channel SOT-23(SOT-23-3) MOSFETs ROHS 17930-SI2301CDS-T1-E3
20V 3.1A 1.6W 112mΩ@4.5V,2.8A 1V@250uA P Channel SOT-23(SOT-23-3) MOSFETs ROHS

20V 3.1A 1.6W 112mΩ@4.5V,2.8A 1V@250uA P Channel SOT-23(SOT-23-3) MOSFETs ROHS

Supplier's Site
Mosfet Transistor, P Channel, -3.1 A, -20 V, 0.11 Ohm, -2.5 V, -400 Mv Rohs Compliant Vishay - 97W2628 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -3.1 A, -20 V, 0.11 Ohm, -2.5 V, -400 Mv Rohs Compliant Vishay
97W2628
Mosfet Transistor, P Channel, -3.1 A, -20 V, 0.11 Ohm, -2.5 V, -400 Mv Rohs Compliant Vishay 97W2628
MOSFET Transistor, P Channel, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV RoHS Compliant: Yes

MOSFET Transistor, P Channel, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2301CDS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2301CDS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2301CDS-T1-E3
MOSFET P-CH 20V 3.1A SOT23-3

MOSFET P-CH 20V 3.1A SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global) Utmel Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 117471-SI2301CDS-T1-E3 1807269 SI2301CDS-T1-E3DKR-ND 278-SI2301CDS-T1-E3 SI2301CDS-T1-E3 SI2301CDS-T1-E3 17930-SI2301CDS-T1-E3 97W2628 SI2301CDS-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301CDS-T1-E3 MOSFETs Single FETs, MOSFETs P-Channel 20V 3.1A SOT-23 MOSFET Transistor MOSFET Single FETs, MOSFETs 20V 3.1A 1.6W 112mΩ@4.5V,2.8A 1V@250uA P Channel SOT-23(SOT-23-3) MOSFETs ROHS Mosfet Transistor, P Channel, -3.1 A, -20 V, 0.11 Ohm, -2.5 V, -400 Mv Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 860 to 1600 milliwatts 1600 milliwatts 860 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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