Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-GE3 SI2301BDS-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028360-SI2301BDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Family Name: Si2301BDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 375pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V Alternative Parts (Cross-Reference): TSM2301BCX RF; TSM2301BCX; TSM2301BCX RFG; LP2301LT3G; Introduction Date: November 08, 2002 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028360-SI2301BDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Family Name: Si2301BDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 375pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V Alternative Parts (Cross-Reference): TSM2301BCX RF; TSM2301BCX; TSM2301BCX RFG; LP2301LT3G; Introduction Date: November 08, 2002 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-GE3 - 028360-SI2301BDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-GE3
028360-SI2301BDS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-GE3 028360-SI2301BDS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028360-SI2301BDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Family Name: Si2301BDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 375pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V Alternative Parts (Cross-Reference): TSM2301BCX RF; TSM2301BCX; TSM2301BCX RFG; LP2301LT3G; Introduction Date: November 08, 2002 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028360-SI2301BDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: Si2301BDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 375pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V
Alternative Parts (Cross-Reference): TSM2301BCX RF; TSM2301BCX; TSM2301BCX RFG; LP2301LT3G;
Introduction Date: November 08, 2002
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI2301BDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2301BDS-T1-GE3
Single FETs, MOSFETs SI2301BDS-T1-GE3
MOSFET P-CH 20V 2.2A SOT23-3

MOSFET P-CH 20V 2.2A SOT23-3

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2301BDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301BDS-T1-GE3TR-ND
Single FETs, MOSFETs SI2301BDS-T1-GE3TR-ND
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2301BDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301BDS-T1-GE3CT-ND
Single FETs, MOSFETs SI2301BDS-T1-GE3CT-ND
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2301BDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301BDS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2301BDS-T1-GE3DKR-ND
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2301BDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2301BDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2301BDS-T1-GE3
MOSFET P-CH 20V 2.2A SOT23-3

MOSFET P-CH 20V 2.2A SOT23-3

Supplier's Site
P Channel Mosfet, Full Reel; Channel Type Vishay - 33P5162 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, Full Reel; Channel Type Vishay
33P5162
P Channel Mosfet, Full Reel; Channel Type Vishay 33P5162
P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; MSL:- RoHS Compliant: Yes

P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
P Channel Mosfet; Channel Type Vishay - 84R8020 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet; Channel Type Vishay
84R8020
P Channel Mosfet; Channel Type Vishay 84R8020
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; Power Dissipation:700mW RoHS Compliant: Yes

P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; Power Dissipation:700mW RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028360-SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 SI2301BDS-T1-GE3TR-ND SI2301BDS-T1-GE3 33P5162 84R8020
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs P Channel Mosfet, Full Reel; Channel Type Vishay P Channel Mosfet; Channel Type Vishay
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 700 milliwatts 700 milliwatts 700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data