Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-GE3 SI2301BDS-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 028360-SI2301BDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: Si2301BDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 375pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V
Alternative Parts (Cross-Reference): TSM2301BCX RF; TSM2301BCX; TSM2301BCX RFG; LP2301LT3G;
Introduction Date: November 08, 2002
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

MOSFET P-CH 20V 2.2A SOT23-3

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)