Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-GE3 SI2301BDS-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028360-SI2301BDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Family Name: Si2301BDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 375pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V Alternative Parts (Cross-Reference): TSM2301BCX RF; TSM2301BCX; TSM2301BCX RFG; LP2301LT3G; Introduction Date: November 08, 2002 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 028360-SI2301BDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Family Name: Si2301BDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 375pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V Alternative Parts (Cross-Reference): TSM2301BCX RF; TSM2301BCX; TSM2301BCX RFG; LP2301LT3G; Introduction Date: November 08, 2002 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-GE3 - 028360-SI2301BDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-GE3
028360-SI2301BDS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-GE3 028360-SI2301BDS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028360-SI2301BDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Family Name: Si2301BDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 375pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V Alternative Parts (Cross-Reference): TSM2301BCX RF; TSM2301BCX; TSM2301BCX RFG; LP2301LT3G; Introduction Date: November 08, 2002 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028360-SI2301BDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: Si2301BDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 375pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V
Alternative Parts (Cross-Reference): TSM2301BCX RF; TSM2301BCX; TSM2301BCX RFG; LP2301LT3G;
Introduction Date: November 08, 2002
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI2301BDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301BDS-T1-GE3TR-ND
Single FETs, MOSFETs SI2301BDS-T1-GE3TR-ND
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2301BDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301BDS-T1-GE3CT-ND
Single FETs, MOSFETs SI2301BDS-T1-GE3CT-ND
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2301BDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301BDS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2301BDS-T1-GE3DKR-ND
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Singapore
20V 2.2A SOT-23 MOSFET Transistor
278-SI2301BDS-T1-GE3
20V 2.2A SOT-23 MOSFET Transistor 278-SI2301BDS-T1-GE3
P-CH MOSFET, 20V, 2.2A, 100mR, SOT-23-3, Small Signal Product overview: SI2301BDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2301BDS-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET, 20V, 2.2A, 100mR, SOT-23-3, Small Signal Product overview: SI2301BDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2301BDS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2301BDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2301BDS-T1-GE3
Single FETs, MOSFETs SI2301BDS-T1-GE3
MOSFET P-CH 20V 2.2A SOT23-3

MOSFET P-CH 20V 2.2A SOT23-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2301BDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2301BDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2301BDS-T1-GE3
MOSFET P-CH 20V 2.2A SOT23-3

MOSFET P-CH 20V 2.2A SOT23-3

Supplier's Site
P Channel Mosfet, Full Reel; Channel Type Vishay - 33P5162 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, Full Reel; Channel Type Vishay
33P5162
P Channel Mosfet, Full Reel; Channel Type Vishay 33P5162
P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; MSL:- RoHS Compliant: Yes

P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
P Channel Mosfet; Channel Type Vishay - 84R8020 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet; Channel Type Vishay
84R8020
P Channel Mosfet; Channel Type Vishay 84R8020
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; Power Dissipation:700mW RoHS Compliant: Yes

P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; Power Dissipation:700mW RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028360-SI2301BDS-T1-GE3 SI2301BDS-T1-GE3TR-ND 278-SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 33P5162 84R8020
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-GE3 Single FETs, MOSFETs 20V 2.2A SOT-23 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs P Channel Mosfet, Full Reel; Channel Type Vishay P Channel Mosfet; Channel Type Vishay
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 700 milliwatts 700 milliwatts 700 milliwatts 700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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