Vishay Precision Group Single FETs, MOSFETs SI2301BDS-T1-E3

Description
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet
Description
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2301BDS-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301BDS-T1-E3DKR-ND
Single FETs, MOSFETs SI2301BDS-T1-E3DKR-ND
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2301BDS-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301BDS-T1-E3TR-ND
Single FETs, MOSFETs SI2301BDS-T1-E3TR-ND
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Single FETs, MOSFETs - SI2301BDS-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2301BDS-T1-E3CT-ND
Single FETs, MOSFETs SI2301BDS-T1-E3CT-ND
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Singapore
P-Channel 2200 mA 20 V MOSFET Transistor
278-SI2301BDS-T1-E3
P-Channel 2200 mA 20 V MOSFET Transistor 278-SI2301BDS-T1-E3
TRANSISTOR 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal Product overview: SI2301BDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 2200 mA, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2200 mA, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2301BDS-T1-E3 can be used for catalog matching and distributor lookup.

TRANSISTOR 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal Product overview: SI2301BDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 2200 mA, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2200 mA, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2301BDS-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2301BDS-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2301BDS-T1-E3
Single FETs, MOSFETs SI2301BDS-T1-E3
MOSFET P-CH 20V 2.2A SOT23-3

MOSFET P-CH 20V 2.2A SOT23-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-E3 - 028359-SI2301BDS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-E3
028359-SI2301BDS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-E3 028359-SI2301BDS-T1-E3
Manufacturer: Vishay Win Source Part Number: 028359-SI2301BDS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Family Name: Si2301BDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 375pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V Alternative Parts (Cross-Reference): TSM2301BCX RFG; TSM2301BCX RF; TSM2301BCX; LP2301LT3G; Introduction Date: November 08, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 028359-SI2301BDS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: Si2301BDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 375pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V
Alternative Parts (Cross-Reference): TSM2301BCX RFG; TSM2301BCX RF; TSM2301BCX; LP2301LT3G;
Introduction Date: November 08, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2301BDS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2301BDS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2301BDS-T1-E3
MOSFET P-CH 20V 2.2A SOT23-3

MOSFET P-CH 20V 2.2A SOT23-3

Supplier's Site
P Channel Mosfet, -20V, 2.2A To-236; Channel Type Vishay - 06J7561 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -20V, 2.2A To-236; Channel Type Vishay
06J7561
P Channel Mosfet, -20V, 2.2A To-236; Channel Type Vishay 06J7561
P CHANNEL MOSFET, -20V, 2.2A TO-236; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV RoHS Compliant: Yes

P CHANNEL MOSFET, -20V, 2.2A TO-236; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV RoHS Compliant: Yes

Supplier's Site
P Channel Mosfet, Full Reel; Channel Type Vishay - 35K3452 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, Full Reel; Channel Type Vishay
35K3452
P Channel Mosfet, Full Reel; Channel Type Vishay 35K3452
P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV RoHS Compliant: Yes

P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV RoHS Compliant: Yes

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI2301BDS-T1-E3
Triode/MOS Tube/Transistor >> MOSFETs SI2301BDS-T1-E3
20V 2.2A 100mΩ@2.8A,4.5V 700mW 950mV@250uA P Channel SOT-23 MOSFETs ROHS

20V 2.2A 100mΩ@2.8A,4.5V 700mW 950mV@250uA P Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3

MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI2301BDS-T1-E3DKR-ND 278-SI2301BDS-T1-E3 SI2301BDS-T1-E3 028359-SI2301BDS-T1-E3 SI2301BDS-T1-E3 06J7561 35K3452 SI2301BDS-T1-E3 SI2301BDS-T1-E3
Product Name Single FETs, MOSFETs P-Channel 2200 mA 20 V MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs P Channel Mosfet, -20V, 2.2A To-236; Channel Type Vishay P Channel Mosfet, Full Reel; Channel Type Vishay Triode/MOS Tube/Transistor >> MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-3 SOT23
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts 20 volts
IDSS 2200 milliamps 2200 milliamps 2400 milliamps
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