Manufacturer: Vishay
Win Source Part Number: 028359-SI2301BDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: Si2301BDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 375pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.8A, 4.5V
Alternative Parts (Cross-Reference): TSM2301BCX RFG; TSM2301BCX RF; TSM2301BCX; LP2301LT3G;
Introduction Date: November 08, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
TRANSISTOR 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal Product overview: SI2301BDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 2200 mA, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2200 mA, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2301BDS-T1-E3 can be used for catalog matching and distributor lookup.
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET P-CH 20V 2.2A SOT23-3
P CHANNEL MOSFET, -20V, 2.2A TO-236; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV RoHS Compliant: Yes
P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV RoHS Compliant: Yes
MOSFET P-CH 20V 2.2A SOT23-3
20V 2.2A 100mΩ@2.8A,4.5V 700mW 950mV@250uA P Channel SOT-23 MOSFETs ROHS
MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028359-SI2301BDS-T1-E3 | 278-SI2301BDS-T1-E3 | SI2301BDS-T1-E3DKR-ND | SI2301BDS-T1-E3 | 06J7561 | 35K3452 | SI2301BDS-T1-E3 | SI2301BDS-T1-E3 | SI2301BDS-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301BDS-T1-E3 | P-Channel 2200 mA 20 V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | P Channel Mosfet, -20V, 2.2A To-236; Channel Type Vishay | P Channel Mosfet, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||||
| PD | 700 milliwatts | 700 milliwatts | 700 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 |
