MOSFET 2P-CH 20V 1.3A SC70-6
P-CH MOSFET 20V 1.3A 490mR SOT-363 Product overview: SI1967DH-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1967DH-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028355-SI1967DH-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 4nC @ 8V
Max Input Capacitance: 110pF @ 10V
Maximum Rds On at Id,Vgs: 490 mOhm @ 910mA, 4.5V
Alternative Parts (Cross-Reference): FDG6306P; AO7801; Si1967DH-T1-E3; Si1967DH-T1-GE3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Mosfet Array 2 P-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6
Mosfet Array 2 P-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6
Mosfet Array 2 P-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6
MOSFET, DUAL P CHANNEL, -20V, -1.3A, SOT-363-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.3A; On Resistance Rds(on):0.64ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes
Dual MOSFET, Dual P Channel, -1.3 A, -20 V, 0.64 ohm, -1.8 V, -400 mV RoHS Compliant: Yes
MOSFET, DUAL P CH, -20V, -1.3A, SOT-363-6, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.3A; On Resistance Rds(on):0.64ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes
20V 1.3A 1.25W 790mΩ@1.8V,250mA 1V@250uA 2 P-Channel SOT-363 MOSFETs ROHS
MOSFET -20V Vds 8V Vgs SC70-6
MOSFET 2P-CH 20V 1.3A SC70-6
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI1967DH-T1-GE3 | 8123108 | 8123108P | 278-SI1967DH-T1-GE3 | 028355-SI1967DH-T1-GE3 | SI1967DH-T1-GE3DKR-ND | 69W7182 | 97W2626 | 86R3863 | SI1967DH-T1-GE3 | SI1967DH-T1-GE3 | SI1967DH-T1-GE3 |
| Product Name | FET, MOSFET Arrays | MOSFETs | MOSFETs | 20V 1.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1967DH-T1-GE3 | FET, MOSFET Arrays | Mosfet, Dual P Channel, -20V, -1.3A, Sot-363-6; Transistor Polarity Vishay | Dual Mosfet, Dual P Channel, -1.3 A, -20 V, 0.64 Ohm, -1.8 V, -400 Mv Rohs Compliant Vishay | Mosfet, Dual P Ch, -20V, -1.3A, Sot-363-6, Full Reel; Transistor Polarity Vishay | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||||||
| IDSS | 1300 milliamps | 1300 milliamps | 1300 milliamps | |||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
