Vishay Intertechnology, Inc. FET, MOSFET Arrays SI1967DH-T1-E3

Mosfet Array 2 P-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6

Mosfet Array 2 P-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6

Mosfet Array 2 P-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6

MOSFET 2P-CH 20V 1.3A SC70-6

2P-CH MOSFET 20V 1.3A 490mR SC70-6 Surface Mount Product overview: SI1967DH-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1967DH-T1-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 064389-SI1967DH-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 4nC @ 8V
Max Input Capacitance: 110pF @ 10V
Maximum Rds On at Id,Vgs: 490 mOhm @ 910mA, 4.5V
Alternative Parts (Cross-Reference): FDG6306P; AO7801; Si1967DH-T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited