P-CH MOSFET, 12V, 1.14A, 390mR, 2-Ch, SC70-6 Product overview: SI1965DH-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 1.14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 1.14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1965DH-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1095715-SI1965DH-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 4.2nC @ 8V
Max Input Capacitance: 120pF @ 6V
Maximum Rds On at Id,Vgs: 390 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Mosfet Array 2 P-Channel (Dual) 12V 1.3A 1.25W Surface Mount SC-70-6
Mosfet Array 2 P-Channel (Dual) 12V 1.3A 1.25W Surface Mount SC-70-6
Mosfet Array 2 P-Channel (Dual) 12V 1.3A 1.25W Surface Mount SC-70-6
MOSFET 2P-CH 12V 1.3A SC70-6
MOSFET 2P-CH 12V 1.3A SC70-6
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI1965DH-T1-E3 | 1095715-SI1965DH-T1-E3 | 742-SI1965DH-T1-E3TR-ND | SI1965DH-T1-E3 | SI1965DH-T1-E3 | SI1965DH-T1-E3 |
| Product Name | 12V 1.14A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1965DH-T1-E3 | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | |||
| PD | 1250 milliwatts | 1250 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| V(BR)DSS | 12 volts | 12 volts |
