Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1965DH-T1-E3 SI1965DH-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1095715-SI1965DH-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Maximum Power Dissipation: 1.25W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 4.2nC @ 8V Max Input Capacitance: 120pF @ 6V Maximum Rds On at Id,Vgs: 390 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1095715-SI1965DH-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Maximum Power Dissipation: 1.25W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 4.2nC @ 8V Max Input Capacitance: 120pF @ 6V Maximum Rds On at Id,Vgs: 390 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1965DH-T1-E3 - 1095715-SI1965DH-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1965DH-T1-E3
1095715-SI1965DH-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1965DH-T1-E3 1095715-SI1965DH-T1-E3
Manufacturer: Vishay Win Source Part Number: 1095715-SI1965DH-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Maximum Power Dissipation: 1.25W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 4.2nC @ 8V Max Input Capacitance: 120pF @ 6V Maximum Rds On at Id,Vgs: 390 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1095715-SI1965DH-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 4.2nC @ 8V
Max Input Capacitance: 120pF @ 6V
Maximum Rds On at Id,Vgs: 390 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - 742-SI1965DH-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SI1965DH-T1-E3TR-ND
FET, MOSFET Arrays 742-SI1965DH-T1-E3TR-ND
Mosfet Array 2 P-Channel (Dual) 12V 1.3A 1.25W Surface Mount SC-70-6

Mosfet Array 2 P-Channel (Dual) 12V 1.3A 1.25W Surface Mount SC-70-6

Buy Now Datasheet
FET, MOSFET Arrays - 742-SI1965DH-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SI1965DH-T1-E3CT-ND
FET, MOSFET Arrays 742-SI1965DH-T1-E3CT-ND
Mosfet Array 2 P-Channel (Dual) 12V 1.3A 1.25W Surface Mount SC-70-6

Mosfet Array 2 P-Channel (Dual) 12V 1.3A 1.25W Surface Mount SC-70-6

Buy Now Datasheet
FET, MOSFET Arrays - 742-SI1965DH-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SI1965DH-T1-E3DKR-ND
FET, MOSFET Arrays 742-SI1965DH-T1-E3DKR-ND
Mosfet Array 2 P-Channel (Dual) 12V 1.3A 1.25W Surface Mount SC-70-6

Mosfet Array 2 P-Channel (Dual) 12V 1.3A 1.25W Surface Mount SC-70-6

Buy Now Datasheet
FET, MOSFET Arrays - SI1965DH-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI1965DH-T1-E3
FET, MOSFET Arrays SI1965DH-T1-E3
MOSFET 2P-CH 12V 1.3A SC70-6

MOSFET 2P-CH 12V 1.3A SC70-6

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -12V Vds 8V Vgs SC70-6

MOSFET -12V Vds 8V Vgs SC70-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1965DH-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1965DH-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1965DH-T1-E3
MOSFET 2P-CH 12V 1.3A SC70-6

MOSFET 2P-CH 12V 1.3A SC70-6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1095715-SI1965DH-T1-E3 742-SI1965DH-T1-E3TR-ND SI1965DH-T1-E3 SI1965DH-T1-E3 SI1965DH-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1965DH-T1-E3 FET, MOSFET Arrays FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; 2 P-Channel (Dual)
V(BR)DSS 12 volts 12 volts
PD 1250 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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