Vishay Precision Group FET, MOSFET Arrays SI1926DL-T1-GE3

Mosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6

MOSFET 2N-CH 60V 0.37A SOT363 Product overview: SI1926DL-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.37A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.37A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1926DL-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 60V 0.37A SOT363

Manufacturer: Vishay
Win Source Part Number: 1095713-SI1926DL-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si1926DL
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-3 (SOT323)
Maximum Power Dissipation: 510mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 370mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 1.4nC @ 10V
Max Input Capacitance: 18.5pF @ 30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 340mA, 10V
Alternative Parts (Cross-Reference): 2N7002BKS; TSM2N7002KDCU6; BSS138PS; TSM2N7002KDCU6 RF;
Introduction Date: October 28, 2007
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance