MOSFET 2N-CH 60V 0.37A SC-70-6
2 N-Ch MOSFET 60V 370mA 1.4R SOT-363 Product overview: SI1926DL-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 370mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 370mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1926DL-T1-E3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6
Manufacturer: Vishay
Win Source Part Number: 1248794-SI1926DL-T1-
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 6-TSSOP, SC-88, SOT-363
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 370mA
Power - Max: 510mW
Family Name: Si1926DL
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: SC-70-6 (SOT-363)
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 18.5pF @ 30V
Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V
Alternative Parts (Cross-Reference): TSM2N7002KDCU6; 2N7002PS,115; 2N7002BKS;
Introduction Date: October 28, 2007
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 60V 0.37A SC70-6
MOSFET, DUAL N-CH, 60V, 0.34A, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:370mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 60V, 0.37A, SOT-363-6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:370mA; On Resistance Rds(on):3ohm; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI1926DL-T1-E3 | 278-SI1926DL-T1-E3 | SI1926DL-T1-E3DKR-ND | 1248794-SI1926DL-T1-E3 | SI1926DL-T1-E3 | SI1926DL-T1-E3 | 01AC4977 | 75M5439 |
| Product Name | FET, MOSFET Arrays | 60V 370mA MOSFET Transistor | FET, MOSFET Arrays | Electrical Parts - SI1926DL-T1-E3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 60V, 0.34A, Sot-363; Transistor Polarity Vishay | Mosfet, Dual N Channel, 60V, 0.37A, Sot-363-6, Full Reel; Transistor Polarity Vishay |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | |||||||
| IDSS | 370 milliamps | 370 milliamps | 370 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
