MOSFET 2N-CH 20V 1.3A SOT-363
2 N-Ch MOSFET, 20V, 1.3A, 198mR, SOT-363 Product overview: SI1922EDH-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1922EDH-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 121672-SI1922EDH-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2.5nC @ 8V
Maximum Rds On at Id,Vgs: 198 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6
MOSFET, NN CH, 20V, 1.3A, SOT363; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.3A; On Resistance Rds(on):0.165ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2N-CH 20V 1.3A SC70-6
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI1922EDH-T1-GE3 | 278-SI1922EDH-T1-GE3 | 8123091P | 8123091 | 121672-SI1922EDH-T1-GE3 | SI1922EDH-T1-GE3CT-ND | 64T4056 | SI1922EDH-T1-GE3 | SI1922EDH-T1-GE3 |
| Product Name | FET, MOSFET Arrays | 20V 1.3A MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1922EDH-T1-GE3 | FET, MOSFET Arrays | Mosfet, Nn Ch, 20V, 1.3A, Sot363; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| IDSS | 1300 milliamps | 1300 milliamps | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
