Vishay Intertechnology, Inc. FET, MOSFET Arrays SI1913EDH-T1-E3

Description
Mosfet Array 2 P-Channel (Dual) 20V 880mA 570mW Surface Mount SC-70-6
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Description
Mosfet Array 2 P-Channel (Dual) 20V 880mA 570mW Surface Mount SC-70-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI1913EDH-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI1913EDH-T1-E3TR-ND
FET, MOSFET Arrays SI1913EDH-T1-E3TR-ND
Mosfet Array 2 P-Channel (Dual) 20V 880mA 570mW Surface Mount SC-70-6

Mosfet Array 2 P-Channel (Dual) 20V 880mA 570mW Surface Mount SC-70-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1913EDH-T1-E3 - 113408-SI1913EDH-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1913EDH-T1-E3
113408-SI1913EDH-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1913EDH-T1-E3 113408-SI1913EDH-T1-E3
Manufacturer: Vishay Win Source Part Number: 113408-SI1913EDH-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Maximum Power Dissipation: 570mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 880mA Gate-Source Threshold Voltage: 450mV @ 100μA Max Gate Charge: 1.8nC @ 4.5V Maximum Rds On at Id,Vgs: 490 mOhm @ 880mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 113408-SI1913EDH-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 570mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 880mA
Gate-Source Threshold Voltage: 450mV @ 100μA
Max Gate Charge: 1.8nC @ 4.5V
Maximum Rds On at Id,Vgs: 490 mOhm @ 880mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - SI1913EDH-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI1913EDH-T1-E3
FET, MOSFET Arrays SI1913EDH-T1-E3
MOSFET 2P-CH 20V 0.88A SC70-6

MOSFET 2P-CH 20V 0.88A SC70-6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1913EDH-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1913EDH-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1913EDH-T1-E3
MOSFET 2P-CH 20V 0.88A SC70-6

MOSFET 2P-CH 20V 0.88A SC70-6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI1913EDH-T1-E3TR-ND 113408-SI1913EDH-T1-E3 SI1913EDH-T1-E3 SI1913EDH-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1913EDH-T1-E3 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; SC-70-6 (SOT-363) 6-TSSOP, SC-88, SOT-363
Polarity P-Channel P-Channel; 2 P-Channel (Dual)
V(BR)DSS 20 volts 20 volts
PD 570 milliwatts
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