Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1903DL-T1-E3 SI1903DL-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 101516-SI1903DL-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Maximum Power Dissipation: 270mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 410mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 1.8nC @ 4.5V Maximum Rds On at Id,Vgs: 995 mOhm @ 410mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 101516-SI1903DL-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Maximum Power Dissipation: 270mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 410mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 1.8nC @ 4.5V Maximum Rds On at Id,Vgs: 995 mOhm @ 410mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1903DL-T1-E3 - 101516-SI1903DL-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1903DL-T1-E3
101516-SI1903DL-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1903DL-T1-E3 101516-SI1903DL-T1-E3
Manufacturer: Vishay Win Source Part Number: 101516-SI1903DL-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Maximum Power Dissipation: 270mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 410mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 1.8nC @ 4.5V Maximum Rds On at Id,Vgs: 995 mOhm @ 410mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 101516-SI1903DL-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 270mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 410mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.8nC @ 4.5V
Maximum Rds On at Id,Vgs: 995 mOhm @ 410mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1903DL-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1903DL-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1903DL-T1-E3
MOSFET 2P-CH 20V 0.41A SC70-6

MOSFET 2P-CH 20V 0.41A SC70-6

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 101516-SI1903DL-T1-E3 SI1903DL-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1903DL-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 20 volts
PD 270 milliwatts
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