Mosfet Array 2 N-Channel (Dual) 20V 660mA 270mW Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 20V 660mA 270mW Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 20V 660mA 270mW Surface Mount SC-70-6
MOSFET 2N-CH 20V 0.66A SC-70-6 Product overview: SI1902DL-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.66A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.66A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1902DL-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028353-SI1902DL-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 270mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 660mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.2nC @ 4.5V
Maximum Rds On at Id,Vgs: 385 mOhm @ 660mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
MOSFET, DUAL N CHANNEL, 20V, 0.66A, SC-70-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:660mA; On Resistance Rds(on):0.32ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 20V, 0.66A, SC-70-6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:660mA; On Resistance Rds(on):0.32ohm; Transistor Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes
MOSFET 2N-CH 20V 0.66A SC70-6
MOSFET 2N-CH 20V 0.66A SC-70-6
MOSFET 2N-CH 20V 0.66A SC-70-6
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI1902DL-T1-GE3DKR-ND | 278-SI1902DL-T1-GE3 | 028353-SI1902DL-T1-GE3 | 18X0007 | SI1902DL-T1-GE3 | SI1902DL-T1-GE3 | SI1902DL-T1-GE3 | 880-SI1902DL-T1-GE3 |
| Product Name | FET, MOSFET Arrays | 20V 0.66A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1902DL-T1-GE3 | Mosfet, Dual N Channel, 20V, 0.66A, Sc-70-6; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | FET, MOSFET Arrays | MOSFET 2N-CH 20V 0.66A SC-70-6 |
| Package Type | 6-TSSOP, SC-88, SOT-363 | SOT3; SC-70-6 (SOT-363) | TO-3 | 6-TSSOP, SC-88, SOT-363 | ||||
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| PD | 270 milliwatts | 270 milliwatts | 270 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 20 volts | 20 volts |
