Trans MOSFET N-CH 20V 1A 6-Pin SC-70 T/R Product overview: SI1902CDL-T1-BE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1902CDL-T1-BE3
MOSFET 2N-CH 20V 1.1A SC-70-6
Mosfet Array 2 N-Channel (Dual) 20V 1A (Ta), 1.1A (Tc) 300mW (Ta), 420mW (Tc) Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 20V 1A (Ta), 1.1A (Tc) 300mW (Ta), 420mW (Tc) Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 20V 1A (Ta), 1.1A (Tc) 300mW (Ta), 420mW (Tc) Surface Mount SC-70-6
Win Source Part Number: 1117913-SI1902CDL-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power - Max: 300mW (Ta), 420mW (Tc)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Vishay Siliconix
Other Names: 742-SI1902CDL-T1-BE3
Base Product Number: SI1902
MOSFET, N-CH, 20V, 1.1A, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.1A; On Resistance Rds(on):0.195ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V
MOSFET 2N-CH 20V 1A/1.1A SC70-6
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI1902CDL-T1-BE3 | SI1902CDL-T1-BE3 | 742-SI1902CDL-T1-BE3TR-ND | 1117913-SI1902CDL-T1-BE3 | 36AJ8057 | SI1902CDL-T1-BE3 |
| Product Name | 20V 1A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Mosfet, N-Ch, 20V, 1.1A, Sc-70; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| PD | 300 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel |
