Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1901DL-T1 SI1901DL-T1

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092775-SI1901DL-T1 Mounting: SMD (SMT) Power Dissipation: 200 mW Rise Time: 25 ns Fall Time: 25 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-363 Popularity: Low Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Dual Continuous Drain Current (ID): -180 mA Drain to Source Breakdown Voltage: -20 V Turn-Off Delay Time: 19 ns Drain to Source Resistance: 3.8 Ω Gate to Source Voltage (Vgs): 8 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092775-SI1901DL-T1 Mounting: SMD (SMT) Power Dissipation: 200 mW Rise Time: 25 ns Fall Time: 25 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-363 Popularity: Low Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Dual Continuous Drain Current (ID): -180 mA Drain to Source Breakdown Voltage: -20 V Turn-Off Delay Time: 19 ns Drain to Source Resistance: 3.8 Ω Gate to Source Voltage (Vgs): 8 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1901DL-T1 - 1092775-SI1901DL-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1901DL-T1
1092775-SI1901DL-T1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1901DL-T1 1092775-SI1901DL-T1
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092775-SI1901DL-T1 Mounting: SMD (SMT) Power Dissipation: 200 mW Rise Time: 25 ns Fall Time: 25 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-363 Popularity: Low Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Dual Continuous Drain Current (ID): -180 mA Drain to Source Breakdown Voltage: -20 V Turn-Off Delay Time: 19 ns Drain to Source Resistance: 3.8 Ω Gate to Source Voltage (Vgs): 8 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092775-SI1901DL-T1
Mounting: SMD (SMT)
Power Dissipation: 200 mW
Rise Time: 25 ns
Fall Time: 25 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-363
Popularity: Low
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Dual
Continuous Drain Current (ID): -180 mA
Drain to Source Breakdown Voltage: -20 V
Turn-Off Delay Time: 19 ns
Drain to Source Resistance: 3.8 Ω
Gate to Source Voltage (Vgs): 8 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1092775-SI1901DL-T1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1901DL-T1
V(BR)DSS -20 volts
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