Vishay Intertechnology, Inc. Dual 30V MOSFET Transistor SI1900DL-T1-GE3

MOSFET Dual 30V N-CH TRENCH Product overview: SI1900DL-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1900DL-T1-GE3 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 30V 630mA (Ta), 590mA (Ta) 300mW, 270mW Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 30V 630mA (Ta), 590mA (Ta) 300mW, 270mW Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 30V 630mA (Ta), 590mA (Ta) 300mW, 270mW Surface Mount SC-70-6

Manufacturer: Vishay Siliconix
Win Source Part Number: 756534-SI1900DL-T1-GE3
Packaging: Tape and Reel
Mounting Style: SMD
FET Feature: Standard
Transistor Polarity: 2 N-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: SC-70-6
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-TSSOP, SC-88, SOT-363
Popularity: Low
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Maximum Power: 300mW, 270mW
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 630mA, 590mA
Rds On (Maximum) at Id, Vgs: 480mOhm at 590mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 1.4nC at 10V

MOSFET 2 N-CH 30V SC70-6