Vishay Intertechnology, Inc. FET, MOSFET Arrays SI1900DL-T1-GE3

Description
MOSFET 2 N-CH 30V SC70-6
Request a Quote Datasheet
Description
MOSFET 2 N-CH 30V SC70-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI1900DL-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI1900DL-T1-GE3
FET, MOSFET Arrays SI1900DL-T1-GE3
MOSFET 2 N-CH 30V SC70-6

MOSFET 2 N-CH 30V SC70-6

Supplier's Site Datasheet
FETs - Arrays - SI1900DL-T1-GE3 - 756534-SI1900DL-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Arrays - SI1900DL-T1-GE3
756534-SI1900DL-T1-GE3
FETs - Arrays - SI1900DL-T1-GE3 756534-SI1900DL-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 756534-SI1900DL-T1-G E3 Packaging: Tape and Reel Mounting Style: SMD FET Feature: Standard Transistor Polarity: 2 N-Channel (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: SC-70-6 Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 6-TSSOP, SC-88, SOT-363 Popularity: Low Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Maximum Power: 300mW, 270mW Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 630mA, 590mA Rds On (Maximum) at Id, Vgs: 480mOhm at 590mA, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 1.4nC at 10V

Manufacturer: Vishay Siliconix
Win Source Part Number: 756534-SI1900DL-T1-GE3
Packaging: Tape and Reel
Mounting Style: SMD
FET Feature: Standard
Transistor Polarity: 2 N-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: SC-70-6
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-TSSOP, SC-88, SOT-363
Popularity: Low
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Maximum Power: 300mW, 270mW
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 630mA, 590mA
Rds On (Maximum) at Id, Vgs: 480mOhm at 590mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 1.4nC at 10V

Buy Now
FET, MOSFET Arrays - 742-SI1900DL-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SI1900DL-T1-GE3CT-ND
FET, MOSFET Arrays 742-SI1900DL-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 30V 630mA (Ta), 590mA (Ta) 300mW, 270mW Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 30V 630mA (Ta), 590mA (Ta) 300mW, 270mW Surface Mount SC-70-6

Buy Now Datasheet
FET, MOSFET Arrays - 742-SI1900DL-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SI1900DL-T1-GE3TR-ND
FET, MOSFET Arrays 742-SI1900DL-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 630mA (Ta), 590mA (Ta) 300mW, 270mW Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 30V 630mA (Ta), 590mA (Ta) 300mW, 270mW Surface Mount SC-70-6

Buy Now Datasheet
FET, MOSFET Arrays - 742-SI1900DL-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SI1900DL-T1-GE3DKR-ND
FET, MOSFET Arrays 742-SI1900DL-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 630mA (Ta), 590mA (Ta) 300mW, 270mW Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 30V 630mA (Ta), 590mA (Ta) 300mW, 270mW Surface Mount SC-70-6

Buy Now Datasheet
Singapore
Dual 30V MOSFET Transistor
278-SI1900DL-T1-GE3
Dual 30V MOSFET Transistor 278-SI1900DL-T1-GE3
MOSFET Dual 30V N-CH TRENCH Product overview: SI1900DL-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1900DL-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET Dual 30V N-CH TRENCH Product overview: SI1900DL-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1900DL-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs SC70-6

MOSFET 30V Vds 20V Vgs SC70-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1900DL-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1900DL-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1900DL-T1-GE3
MOSFET 2N-CH 30V 0.63A SC70-6

MOSFET 2N-CH 30V 0.63A SC70-6

Supplier's Site
MOSFET Dual 30V N-CH TRENCH - 880-SI1900DL-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET Dual 30V N-CH TRENCH
880-SI1900DL-T1-GE3
MOSFET Dual 30V N-CH TRENCH 880-SI1900DL-T1-GE3
MOSFET Dual 30V N-CH TRENCH

MOSFET Dual 30V N-CH TRENCH

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI1900DL-T1-GE3 756534-SI1900DL-T1-GE3 742-SI1900DL-T1-GE3CT-ND 278-SI1900DL-T1-GE3 SI1900DL-T1-GE3 SI1900DL-T1-GE3 880-SI1900DL-T1-GE3
Product Name FET, MOSFET Arrays FETs - Arrays - SI1900DL-T1-GE3 FET, MOSFET Arrays Dual 30V MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Dual 30V N-CH TRENCH
Polarity N-Channel; 2 N-Channel (Dual) N-Channel; 2 N-Channel (Dual)
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 630 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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