2-Ch N-Ch JFET, 30V, 590mA, 480mR, SOT-363 Product overview: SI1900DL-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 590mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 590mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1900DL-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 0.59A SC70-6
Mosfet Array 2 N-Channel (Dual) 30V 590mA 270mW Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 30V 590mA 270mW Surface Mount SC-70-6
Mosfet Array 2 N-Channel (Dual) 30V 590mA 270mW Surface Mount SC-70-6
Manufacturer: Vishay
Win Source Part Number: 028351-SI1900DL-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si1900DL
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 270mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 590mA
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 1.4nC @ 10V
Maximum Rds On at Id,Vgs: 480 mOhm @ 590mA, 10V
Alternative Parts (Cross-Reference): DMN32D4SDW-7; DMN32D4SDW-13; PMGD400UN; PMGD400UN,115;
Introduction Date: October 24, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
MOSFET RECOMMENDED ALT 781-SI1900DL
DUAL N CHANNEL MOSFET, 30V, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:630mA; On Resistance Rds(on):0.48ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R
MOSFET 2N-CH 30V 0.59A SC70-6
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI1900DL-T1-E3 | SI1900DL-T1-E3 | SI1900DL-T1-E3DKR-ND | 028351-SI1900DL-T1-E3 | SI1900DL-T1-E3 | 06J7549 | 880-SI1900DL-T1-E3 | SI1900DL-T1-E3 |
| Product Name | 30V 590mA MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1900DL-T1-E3 | MOSFET | Dual N Channel Mosfet, 30V, Sc-70; Transistor Polarity Vishay | Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| PD | 270 milliwatts | 270 milliwatts | 270 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
