Vishay Precision Group FET, MOSFET Arrays SI1900DL-T1-E3

Description
Mosfet Array 2 N-Channel (Dual) 30V 590mA 270mW Surface Mount SC-70-6
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 590mA 270mW Surface Mount SC-70-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI1900DL-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI1900DL-T1-E3DKR-ND
FET, MOSFET Arrays SI1900DL-T1-E3DKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 590mA 270mW Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 30V 590mA 270mW Surface Mount SC-70-6

Buy Now Datasheet
FET, MOSFET Arrays - SI1900DL-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI1900DL-T1-E3TR-ND
FET, MOSFET Arrays SI1900DL-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 590mA 270mW Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 30V 590mA 270mW Surface Mount SC-70-6

Buy Now Datasheet
FET, MOSFET Arrays - SI1900DL-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI1900DL-T1-E3CT-ND
FET, MOSFET Arrays SI1900DL-T1-E3CT-ND
Mosfet Array 2 N-Channel (Dual) 30V 590mA 270mW Surface Mount SC-70-6

Mosfet Array 2 N-Channel (Dual) 30V 590mA 270mW Surface Mount SC-70-6

Buy Now Datasheet
Singapore, Singapore
30V 590mA MOSFET Transistor
278-SI1900DL-T1-E3
30V 590mA MOSFET Transistor 278-SI1900DL-T1-E3
2-Ch N-Ch JFET, 30V, 590mA, 480mR, SOT-363 Product overview: SI1900DL-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 590mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 590mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1900DL-T1-E3 can be used for catalog matching and distributor lookup.

2-Ch N-Ch JFET, 30V, 590mA, 480mR, SOT-363 Product overview: SI1900DL-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 590mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 590mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1900DL-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1900DL-T1-E3 - 028351-SI1900DL-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1900DL-T1-E3
028351-SI1900DL-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1900DL-T1-E3 028351-SI1900DL-T1-E3
Manufacturer: Vishay Win Source Part Number: 028351-SI1900DL-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si1900DL Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Maximum Power Dissipation: 270mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 590mA Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 1.4nC @ 10V Maximum Rds On at Id,Vgs: 480 mOhm @ 590mA, 10V Alternative Parts (Cross-Reference): DMN32D4SDW-7; DMN32D4SDW-13; PMGD400UN; PMGD400UN,115; Introduction Date: October 24, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028351-SI1900DL-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si1900DL
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 270mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 590mA
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 1.4nC @ 10V
Maximum Rds On at Id,Vgs: 480 mOhm @ 590mA, 10V
Alternative Parts (Cross-Reference): DMN32D4SDW-7; DMN32D4SDW-13; PMGD400UN; PMGD400UN,115;
Introduction Date: October 24, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 781-SI1900DL

MOSFET RECOMMENDED ALT 781-SI1900DL

Buy Now Datasheet
Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R - 880-SI1900DL-T1-E3 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R
880-SI1900DL-T1-E3
Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R 880-SI1900DL-T1-E3
Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R

Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R

Supplier's Site
Dual N Channel Mosfet, 30V, Sc-70; Transistor Polarity Vishay - 06J7549 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 30V, Sc-70; Transistor Polarity Vishay
06J7549
Dual N Channel Mosfet, 30V, Sc-70; Transistor Polarity Vishay 06J7549
DUAL N CHANNEL MOSFET, 30V, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:630mA; On Resistance Rds(on):0.48ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 30V, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:630mA; On Resistance Rds(on):0.48ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site
FET, MOSFET Arrays - SI1900DL-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI1900DL-T1-E3
FET, MOSFET Arrays SI1900DL-T1-E3
MOSFET 2N-CH 30V 0.59A SC70-6

MOSFET 2N-CH 30V 0.59A SC70-6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1900DL-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1900DL-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1900DL-T1-E3
MOSFET 2N-CH 30V 0.59A SC70-6

MOSFET 2N-CH 30V 0.59A SC70-6

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI1900DL-T1-E3DKR-ND 278-SI1900DL-T1-E3 028351-SI1900DL-T1-E3 SI1900DL-T1-E3 880-SI1900DL-T1-E3 06J7549 SI1900DL-T1-E3 SI1900DL-T1-E3
Product Name FET, MOSFET Arrays 30V 590mA MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1900DL-T1-E3 MOSFET Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R Dual N Channel Mosfet, 30V, Sc-70; Transistor Polarity Vishay FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; SC-70-6 (SOT-363) TO-3 6-TSSOP, SC-88, SOT-363
Polarity N-Channel N-Channel N-Channel N-Channel; 2 N-Channel (Dual)
PD 270 milliwatts 270 milliwatts 270 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
V(BR)DSS 30 volts 30 volts 30 volts
Unlock Full Specs
to access all available technical data

Similar Products

 - 94-2402 - Rochester Electronics
Specs
Polarity N-Channel
Package Type TO-3; TO-3
View Details
2 suppliers
DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor - T2G4003532-FS - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-360
Power Gain 16.5 dB
View Details
2 suppliers